High-Voltage Lateral Double-Diffused Metal-Oxide Semiconductor with Double Superjunction

Wu, Lijuan; Wu, Yiqing; Zhang, Yinyan; Lei, Bing; Zhu, Lin; Huang, Ye

doi:10.1007/s11664-019-07030-y

Cited by 1 publication

(1 citation statement)

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“…Scholars have obtained many results after long-term research on StBV. Some of these results have been obtained using an analytical model of StBV [8][9][10][11][12][13][14], and others are related to new structures [15][16][17][18][19][20][21][22][23][24][25][26][27], in some of which StBV can reach more than 1000 V [25][26][27]. However, when a device is turned off rapidly, there is insufficient time for an electron inversion layer to form under the BOX, which can induce a DD effect in the Micromachines 2023, 14, 887 2 of 14 substrate.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer

et al. 2023

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In this paper, the transient breakdown voltage (TrBV) of a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) device was increased by introducing a step P-type doping buried layer (SPBL) below the buried oxide (BOX). Device simulation software MEDICI 0.13.2 was used to investigate the electrical characteristics of the new devices. When the device was turned off, the SPBL could enhance the reduced surface field (RESURF) effect and modulate the lateral electric field in the drift region to ensure that the surface electric field was evenly distributed, thus increasing the lateral breakdown voltage (BVlat). The enhancement of the RESURF effect while maintaining a high doping concentration in the drift region (Nd) in the SPBL SOI LDMOS resulted in a reduction in the substrate doping concentration (Psub) and an expansion of the substrate depletion layer. Therefore, the SPBL both improved the vertical breakdown voltage (BVver) and suppressed an increase in the specific on-resistance (Ron,sp). The results of simulations showed a 14.46% higher TrBV and a 46.25% lower Ron,sp for the SPBL SOI LDMOS compared to those of the SOI LDMOS. As the SPBL optimized the vertical electric field at the drain, the turn-off non-breakdown time (Tnonbv) of the SPBL SOI LDMOS was 65.64% longer than that of the SOI LDMOS. The SPBL SOI LDMOS also demonstrated that TrBV was 10% higher, Ron,sp was 37.74% lower, and Tnonbv was 10% longer than those of the double RESURF SOI LDMOS.

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