High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics

Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

“…As shown in Fig. 6(b), under a high-speed switching condition from a forward current of 1 A to a reverse bias of 300 V with a fast di/dt of 275 A/μs [18], the LLO-SBD exhibits a low reverse recovery time (trr) of 14 ns and a switching charge (Qrr) of 12 nC, outperforming the value obtained in the Si fast-recovery diode (RF305BM6S). This superior switching performance should be attributed to the high electron mobility of the unipolar GaN SBD, and the relative immunity to surface-related charge trapping effects in the fullyvertical structure [31].…”

“…The full-width-half-maximums (FWHMs) of GaN (002) and (102) planes extracted from the rocking curves are 93.6 arcsec and 154.8 arcsec, corresponding to the screw and edge dislocations of 1.78×10 7 and 1.27×10 8 m -2 [4], respectively. Furthermore, the AFM image of the n --GaN drift layer show the atomically flat surface with a stepped-andterraced structure [18], exhibiting a small root mean square (RMS) roughness of 0.17 nm (Fig. 1(d)) [14].…”

“…For GaN-on-Si quasi-vertical diodes, it is very challenging to grow high-quality thick GaN epilayers due to the large mismatch of lattice constant and thermal expansion coefficient between GaN and Si [13], [14], resulting in severe leakage and premature breakdown issues in such devices [15]. Alternatively, the highquality GaN films with low dislocation density could be epitaxially grown on the mature sapphire substrate [16], [18]. However, the fundamental limitation of the sapphire substrate is its poor heat dissipation capability with a low thermal conductivity (kT) [19], which would seriously affect the device's electrostatic characteristics and electrothermal ruggedness, especially for thermal-resistance and surge-current capabilities [9], [20], [21].…”

Realization of Ultra-Scaled MoS2 Vertical Diodes via Double-Side Electrodes Lamination

“…Schottky diodes represent fundamental building blocks for modern electronics and optoelectronics. With majority carriers transport and excellent rectifier behavior, Schottky diodes have been widely used for logic circuits, , high-frequency switching devices, − as well as light-detection and emitting devices. ,, From a structure point of view, a conventional Schottky diode has a vertical three-layer sandwich structure, as schematically illustrated in Figure a,b. Two electrodes are contacted on both sides of a semiconductor, where one electrode forms ohmic contact and another demonstrates Schottky barrier to the semiconductor.…”

Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling

“…Recently, GaN-based vertical power devices have shown a great potential for the next generation of high-efficiency power systems [3][4][5]. Due to their unique properties of a fast switching speed, low turn-on voltage and high-current capability, GaN vertical Schottky barrier diodes (SBDs) have attracted tremendous attention and are considered as promising and indispensable components in modern power systems [6][7][8]. However, conventional vertical GaN SBDs typically suffer from the Schottky barrier lowering effect induced by the high electric field at the Schottky junction interface, which results in a large leakage current and premature breakdown of the devices [9].…”