High-voltage single-crystal diamond diodes

Twitchen, Daniel J.; Whitehead, Andrew L.; Coe, Steven E.; Isberg, Jan; Hammersberg, J.; Wikström, T.; Johansson, Erik M. J.

doi:10.1109/ted.2004.826867

Cited by 121 publications

(79 citation statements)

References 9 publications

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“…The effect of φ Bp on the drift carrier concentration justifies the use of N A (i ) = 10 11 cm −3 , where the drift layer is completely depleted by the Schottky anode as p < N A (i ) for y < 10 μm, as would be the case for a completely intrinsic drift layer. In addition, μ p (i) = 3800 cm 2 /V · s while μ p (p + ) ∼ 55 cm 2 /V · s, which agrees with data obtained from material characterization [2], [6], [14].…”

Section: Resultssupporting

confidence: 88%

“…This enables the voltage-blocking layer, under reverse bias, to be a thin undoped i-layer. It also allows for the ultrahigh mobility of diamond in the i-layer (see Table I) to be exploited during space-charge-limited (SCL) conduction in the forward direction [2], [7]. Additionally, the ionization of intrinsic nitrogen impurities that result during CVD single-crystal diamond growth [8] must be considered, as these serve as compensating donor species.…”

Section: A Incomplete Ionization Of Dopantsmentioning

confidence: 99%

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Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Rashid

Tajani

Twitchen

et al. 2008

IEEE Trans. Electron Devices

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Section: Resultssupporting

confidence: 88%

Section: A Incomplete Ionization Of Dopantsmentioning

confidence: 99%

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Rashid

Tajani

Twitchen

et al. 2008

IEEE Trans. Electron Devices

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“…The electrical conductivity of semiconducting diamond can be controlled by bulk and surface doping 1,2 to enable device applications such as diodes, 3 transistors, 4 and radiation sensors, 5 in particular, in extreme environments (high temperature, high radiation). 6 Electronic quality p-type material 7 can be semiconducting, metallic or superconducting, according to the B concentration and temperature.…”

mentioning

confidence: 99%

High temperature photoelectron emission and surface photovoltage in semiconducting diamond

Williams

Cooil

Roberts

et al. 2014

Applied Physics Letters

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Sponsorship: EPSRC RONO: EP/G068216/1A non-equilibrium photovoltage is generated in semiconducting diamond at above-ambient temperatures during x-ray and UV illumination that is sensitive to surface conductivity. The H-termination of a moderately doped p-type diamond (111) surface sustains a surface photovoltage up to 700K, while the clean (21) reconstructed surface is not as severely affected. The flat-band C 1s binding energy is determined from 300K measurement to be 283.87 eV. The true value for the H-terminated surface, determined from high temperature measurement, is (285.260.1) eV, corresponding to a valence band maximum lying 1.6 eV below the Fermi level. This is similar to that of the reconstructed (21) surface, although this surface shows a wider spread of binding energy between 285.2 and 285.4 eV. Photovoltage quantification and correction are enabled by real-time photoelectron spectroscopy applied during annealing cycles between 300K and 1200K. A model is presented that accounts for the measured surface photovoltage in terms of a temperature-dependent resistance. A large, high temperature photovoltage that is sensitive to surface conductivity and photon flux suggests a new way to use moderately B-doped diamond in voltage-based sensing devicespublishersversionPeer reviewe

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“…Anyway, little is known about the electrical behavior of radiation induced defects in diamond. Several studies on the conduction mechanisms which give rise to the I-V curves of unirradiated diamond based MIP SBDs are reported in literature [24][25][26] but no work has been carried out on the effects of neutron irradiation on the electrical properties of such specific devices. Changes in the I-V characteristics after neutron irradiation on freestanding HPHT SCD with Ohmic contacts, 13 p-doped/ intrinsic/p-doped diodes based on both single crystal and polycrystalline diamond, 27 and CVD polycrystalline diamond detectors 28 have already been reported.…”

Section: I-v Characteristicsmentioning

confidence: 99%

Characterization of damage induced by heavy neutron irradiation on multilayered L6iF-single crystal chemical vapor deposition diamond detectors

Almaviva

Angelone

Marinelli

et al. 2009

Journal of Applied Physics

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High performance neutron detectors sensitive to both thermal and fast neutrons are of great interest to monitor the high neutron flux produced, e.g., by fission and fusion reactors. An obvious requirement for such an application is neutron irradiation hardness. This is why diamond based neutron detectors are currently under test in some of these facilities. In this paper the damaging effects induced in chemical vapor deposition (CVD) diamond based detectors by a neutron fluence of ∼2×1016 neutrons/cm2 have been studied and significant changes in spectroscopic, electrical, and optical properties have been observed. The detectors are fabricated using high quality synthetic CVD single crystal diamond using the p-type/intrinsic/Schottky metal/L6iF layered structure recently proposed by Marinelli et al. [Appl. Phys. Lett. 89, 143509 (2006)], which allows simultaneous detection of thermal and fast neutrons. Neutron radiation hardness up to at least 2×1014 n/cm2 fast (14 MeV) neutron fluence has been confirmed so far [see Pillon et al., (Fusion Eng. Des. 82, 1174 (2007)]. However, at the much higher neutron fluence of ∼2×1016 neutrons/cm2 damage is observed. The detector response to 5.5 MeV A241m α-particles still shows a well resolved α-peak, thus confirming the good radiation hardness of the device but a remarkable degradation and a significant instability with time of charge collection efficiency and energy resolution arise. Symmetric, nearly Ohmic I-V (current-voltage) characteristics have been recorded from the metal/intrinsic/p-doped diamond layered structure, which before neutron irradiation acted as a Schottky barrier diode with a strong rectifying behavior. The nature and the distribution of the radiation induced damage have been deeply examined by means of cathodoluminescence spectroscopy. A more heavily damaged area into the intrinsic diamond at the same position and with the same extension of the L6iF layer has been found, the increased damage being ascribed to the highly ionizing particles produced in the L6iF layer by thermal neutrons through the nuclear reaction L6i(n,α)T.

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High-voltage single-crystal diamond diodes

Cited by 121 publications

References 9 publications

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

High temperature photoelectron emission and surface photovoltage in semiconducting diamond

Characterization of damage induced by heavy neutron irradiation on multilayered L6iF-single crystal chemical vapor deposition diamond detectors

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