High-voltage SOI lateral MOSFET with a dual vertical field plate

Abstract

A new silicon-on-insulator (SOI) power lateral MOSFET with a dual vertical field plate (VFP) in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage (BV) and specific on-resistance (R on,sp ). The mechanism of the VFP is analyzed and the characteristics of BV and R on,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the R on,sp decreases from 366 mΩ•cm 2 to 110 mΩ•cm 2 .

One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

“…[6][7][8][9][10][11][12][13][14] Meanwhile, the breakdown mechanism of SOI RESURF is different from that of bulk silicon RESURF. [13][14][15][16] The study on the breakdown model is helpful to ascertaining the breakdown mechanism and providing guidance on structural optimization design. In the past two decades, researchers have proposed a variety of SOI RESURF models, which in general can be divided into two categories: a one-dimensional (1D) model and a two-dimensional (2D) model.…”