High voltage vs. high integration: a comparison between CMOS technologies for SPAD cameras

Arbat, A.; Comerma-Montells, A.; Trenado, J.; Gascon, D.; Vilà, A.; Garrido, L.; Diéguez, A.

doi:10.1117/12.860482

Cited by 9 publications

(7 citation statements)

References 13 publications

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“…The CMOS technology offers few possibilities of implementing such guard rings [ 19 , 20 , 21 , 22 ]. By way of example, SPAD, SPAD arrays, and SiPM detection structures with several possible layout techniques for the implementation of guard rings were successfully implemented in 800 nm [ 10 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 ], 700 nm [ 31 ], 500 nm [ 32 , 33 ], 350 nm [ 18 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ], 180 nm [ 47 , 48 , 49 ], 150 nm [ 50 ], 130 nm [ 15 , 51 , 52 , 53 , 54 , 55 ], and 90 nm [ 56 , 57 ] CMOS nodes, and were used to detect single photon signals on the basis of the avalanche breakdown process. Two main limitations of the CMOS technology remain; namely, the higher dark rate and the lower photon detection efficiency with respect to the custom-technology-based conventional SiPMs.…”

Section: Introductionmentioning

confidence: 99%

Application of CMOS Technology to Silicon Photomultiplier Sensors

D’Ascenzo

Zhang

Xie

2017

Sensors

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We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments.

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Section: Introductionmentioning

confidence: 99%

Application of CMOS Technology to Silicon Photomultiplier Sensors

D’Ascenzo

Zhang

Xie

2017

Sensors

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“…The trap centers within the forbidden band due to defects and impurities assist the tunneling from the VB to CB, giving the process the name of trap-assisted tunneling. The DCR by tunneling becomes dominant in SPADs fabricated in DSM CMOS technology due to the decreased depletion width and abrupt doping profiles [189]. In order to reduce tunneling, the electric field within the junction should be lowered by decreasing the biasing voltage, but doing so inevitably lowers the PDE as well.…”

Section: Research Challenges and Conclusionmentioning

confidence: 99%

Sensors for Positron Emission Tomography Applications

Jiang

Chalich

Deen

2019

Sensors

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Positron emission tomography (PET) imaging is an essential tool in clinical applications for the diagnosis of diseases due to its ability to acquire functional images to help differentiate between metabolic and biological activities at the molecular level. One key limiting factor in the development of efficient and accurate PET systems is the sensor technology in the PET detector. There are generally four types of sensor technologies employed: photomultiplier tubes (PMTs), avalanche photodiodes (APDs), silicon photomultipliers (SiPMs), and cadmium zinc telluride (CZT) detectors. PMTs were widely used for PET applications in the early days due to their excellent performance metrics of high gain, low noise, and fast timing. However, the fragility and bulkiness of the PMT glass tubes, high operating voltage, and sensitivity to magnetic fields ultimately limit this technology for future cost-effective and multi-modal systems. As a result, solid-state photodetectors like the APD, SiPM, and CZT detectors, and their applications for PET systems, have attracted lots of research interest, especially owing to the continual advancements in the semiconductor fabrication process. In this review, we study and discuss the operating principles, key performance parameters, and PET applications for each type of sensor technology with an emphasis on SiPM and CZT detectors—the two most promising types of sensors for future PET systems. We also present the sensor technologies used in commercially available state-of-the-art PET systems. Finally, the strengths and weaknesses of these four types of sensors are compared and the research challenges of SiPM and CZT detectors are discussed and summarized.

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“…Another possibility is offered by the implementation of diffusive lowly doped p guard rings around the p + implantation, as depicted in Figure 7. Such layout was developed using the Teledyne DALSA 800 nm HV, 350 nm HV AMS and Chartered GLOBALFOUNDRIES 130 nm/Tezzaron CMOS technology [18,37,41]. In this case the lowly doped region is smoothing the electric field at the edges of the junction.…”

Section: Sipm In Cmos: Challenges and Limitationsmentioning

confidence: 99%

Plug Silicon Photomultiplier for the & Imaging PET System: Physics, Technological Challenges and Application to Modern Nuclear Medicine

D’Ascenzo¹,

Xie²

2018

Photon Counting - Fundamentals and Applications

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We propose the design of a Silicon Photomultiplier at the 180 nm GLOBALFOUNDRIES BCDLITE CMOS technology node. We perform a characterization of the device, in comparison with other results obtained a CMOS technology node and we investigate the limits and strengths of this approach. Finally we show possible future applications of the SiPM in Nuclear Medicine, in particular to digital positron emission tomography systems.

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High voltage vs. high integration: a comparison between CMOS technologies for SPAD cameras

Cited by 9 publications

References 13 publications

Application of CMOS Technology to Silicon Photomultiplier Sensors

Application of CMOS Technology to Silicon Photomultiplier Sensors

Sensors for Positron Emission Tomography Applications

Plug Silicon Photomultiplier for the & Imaging PET System: Physics, Technological Challenges and Application to Modern Nuclear Medicine

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