High work function MoO 2 and ReO 2 contacts for p -type Si and GaN by a room-temperature non-vacuum process

Lee, Won–Jae; Parmar, Narendra S.; Choi, Ji‐Won

doi:10.1016/j.mssp.2017.08.034

Cited by 7 publications

(3 citation statements)

References 28 publications

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“… where ϕ ms is calculated as −0.159 V, the difference in work function between metal and semiconductor. This is the calculated result based on TiN work function 4.764 V, − Si wafer resistance ∼10 Ωcm, and doping concentration 1.32 × 10 15 …”

Section: Resultsmentioning

confidence: 76%

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Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

et al. 2021

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Interfacial and electrical properties of Al 2 O 3 /SiO 2 /Si were analyzed to determine the change in interfacial defects and suboxide density according to the thickness of the SiO 2 layer and to determine the effect on dipole and flat-band voltage. As the thickness of the SiO 2 layer increased (5/7/10 nm), the density of the suboxide present at the interface (2.23/3.23/4.73 × 10 14 atoms/cm 2 ) also increased, respectively. In addition, the slow state density, fixed oxide charge density, and interface state density calculated through the capacitance−voltage (C−V) curve all differ depending on the thickness of the SiO 2 layer and are further reduced by postmetallization annealing (PMA). The flat-band voltages (V FB ) of the SiO 2 /Si sample with thicknesses of 5, 7, and 10 nm before PMA are −1.27, −1.32, and −2.20 V, respectively, and further decreased after PMA (−0.64, −0.80, and −1.74 V). Consequently, it was demonstrated that there was a difference in interfacial defects and suboxides according to the thickness. In addition, it was confirmed that when the interfacial defects and suboxides were reduced, the oxide charge state density and oxygen diffusion decreased, and thus the dipole layer strength and V FB shift decreased.

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Section: Resultsmentioning

confidence: 76%

“…This is the calculated result based on TiN work function 4.764 V, 45−47 Si wafer resistance ∼10 Ωcm, and doping concentration 1.32 × 10 15 . 48 is the charge amount; ε is the dielectric constant of SiO 2 and Al 2 O 3 respectively. Also, t is the physical thickness of SiO 2 and high-k.…”

Section: ±δmentioning

confidence: 99%

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

et al. 2021

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“…Notably, the grain boundary passivation contradicts previous results, according to which a local current flows preferentially at the grain boundaries of an HfO 2 thin film [ 57 – 59 ]. Common device structures in previous results involved electrodes with a high work function, such as p -Si (ɸ ≈ 4.91 eV) [ 60 ] or TiN (ɸ ≈ 4.7 to 4.9 eV) [ 61 ], and Ohmic contact was maintained at the interface between grain boundaries and the bottom electrode. However, in the experiment performed in the current study, a silver electrode (ɸ ≈ 4.26 eV)[ 47 ] was used, and a potential barrier was formed at the interface.…”

Section: Resultsmentioning

confidence: 99%

Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics

et al. 2022

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Flexible electronics has attracted considerable attention owing to its enormous potential for practical applications in various fields. However, the massive strain produced during bending degrades the device. Especially at grain boundaries, due to the accumulation of defects, this degradation is exacerbated in flexible electronic devices. The importance of electrically inactivated grain boundaries increases as devices scale down to the nanoscale. Here, we propose an HfO2-x thin film that can be used as an excellent material for flexible electronics with versatile functionality, especially for grain boundary passivation. Various electrical phases of HfO2-x thin films with conducting to insulating behavior, which originates from oxygen deficiency, have been fabricated on flexible substrates. Furthermore, owing to the most stable charge state of oxygen vacancies, oxygen-deficient HfO2-x shows p-type conductivity. Current mapping by conductive atomic force microscopy reveals that current flow is hindered at grain boundaries due to the formation of potential barriers. This phenomenon is also observed in bent flexible thin films on convex and concave molds, leading to tensile and compressive strains, respectively. Although the defect concentration increases because of lattice deformation during bending, more holes are trapped at the grain boundaries, resulting in an increased hole barrier height. We believe that grain boundary passivation through hole barrier modulation during bending would pave the way for advances in hafnia-based nanoscale flexible electronics.

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High‐Responsivity Natural‐Electrolyte Undersea Photoelectrochemical Photodetector with Self‐Powered Cu@GaN Nanowires Network

Chen

Lin

Qiu

et al. 2023

Adv Funct Materials

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Undersea optical communication (UOC) has been considered as the most potential next‐generation underwater wireless communication technology for ocean exploration. Photodetector is the essential component in UOC system, however, the harsh undersea environment like light attenuation and seawater corrosivity restricts the applications of conventional photodetectors. Herein, a novel natural‐electrolyte self‐powered photoelectrochemical (PEC) photodetector based on core‐shell structured Cu@GaN nanowires (NWs) network is demonstrated and direct utilization of seawater. High quality GaN shell is encapsulated on the Cu NWs network through Ga‐coating and high temperature nitridation processes. A Schottky junction along radial direction has formed at the Cu/GaN interface due to the outward diffusion of Cu into the GaN layer. Such a structure provides narrowed band detection on blue light as well as efficient carrier separation. A self‐powered undersea PEC photodetector is designed with a mini‐pipes connected device chamber, which allows direct indrawing of seawater and blue channel light communication (458 nm). This photodetector works stably for UOC in both shallow and deep‐sea conditions in Pacific Ocean area. It shows a high responsivity up to 5.04 mA W−1 and rapid response time of 0.68 ms. This photodetector can be easily integrated to marine equipment without waterproof packaging for the future energy‐saving UOC.

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High work function MoO 2 and ReO 2 contacts for p -type Si and GaN by a room-temperature non-vacuum process

Cited by 7 publications

References 28 publications

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics

High‐Responsivity Natural‐Electrolyte Undersea Photoelectrochemical Photodetector with Self‐Powered Cu@GaN Nanowires Network

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High work function MoO 2 and ReO 2 contacts for p -type Si and GaN by a room-temperature non-vacuum process

Cited by 7 publications

References 28 publications

Dipole Formation and Electrical Properties According to SiO2 Layer Thickness at an Al2O3/SiO2 Interface

Dipole Formation and Electrical Properties According to SiO2 Layer Thickness at an Al2O3/SiO2 Interface

Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics

High‐Responsivity Natural‐Electrolyte Undersea Photoelectrochemical Photodetector with Self‐Powered Cu@GaN Nanowires Network

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Product

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Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface