High-x InP/InxGa1−xAs quantum well infrared photodetector

Besikci, C.

doi:10.1016/j.infrared.2018.10.018

Cited by 13 publications

(2 citation statements)

References 26 publications

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“…Benefiting from the maturity of materials, excellent pixel operability, uniformity and stability, QWIPs remain alive and continue to progress. [34][35][36] To better explore the ultimate performance of QWIPs and QCDs, we provide our perspectives for future investigation:…”

Section: Discussionmentioning

confidence: 99%

Progress in quantum well and quantum cascade infrared photodetectors in SITP

Zhou¹,

Li²,

Lü³

2019

Chinese Phys. B

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This paper presents a review of recent advances in quantum well and quantum cascade infrared photodetectors developed in Shanghai Institute of Technical Physics, Chinese Academy of Sciences (SITP/CAS). Firstly, the temperature-and bias-dependent photocurrent spectra of very long wavelength (VLW) GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations in detail. We confirm that the first excited state, which belongs to the quasi-bound state, can be converted into a quasi-continuum state induced by bias and temperature. Aided by band structure calculations, we propose a model of the double excited states that determine the working mechanism in VLW QWIPs. Secondly, we present an overview of a VLW QWIP focal plane array (FPA) with 320×256 pixels based on the bound to quasi-bound (BTQB) design. The technology of the manufacturing FPA based on the QWIP structures has been demonstrated. At the operating temperature of 45 K, the detectivity of QWIP FPA is larger than 1.4×10 10 cm•Hz 1/2 /W with a cutoff wavelength larger than 16 µm. Finally, to meet the needs of space applications, we proposed a new long wavelength quantum cascade detector with a broadband detection ranging from 7.6 µm to 10.4 µm. With a pair of identical coupled quantum wells separated by a thin barrier, acting as absorption regions, the relative linewidth (∆E/E) of response can be dramatically broadened to 30.7%. It is shown that the spectral shape and linewidth can be tuned by the thickness of the thin barrier, while it is insensitive to the working temperature. The device can work above liquid nitrogen temperature with a peak responsivity of 63 mA/W and Johnson noise limited detectivity of 5.1×10 9 cm•Hz 1/2 /W.

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Section: Discussionmentioning

confidence: 99%

Progress in quantum well and quantum cascade infrared photodetectors in SITP

Zhou¹,

Li²,

Lü³

2019

Chinese Phys. B

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“…As summarised by the first author in a previous publication [3], there are various articles in the literature reporting higher ability of normal incident radiation detection by quantum wells (QWs) constructed with higher x InxGa1-xAs [4][5][6][7][8][9]. Normal incident radiation detection ability of these structures was attributed to various reasons such as band mixing effects [7], spin-flip inter-sub band transitions due to strong spin-orbit interaction [5], and higher interface scattering [9].…”

Section: Introductionmentioning

confidence: 99%

Grating-free high-x InP/InxGa1-xAs mid-wavelength infrared QWIP focal plane array

2024

Opto-Electronics Review

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The authors report the characteristics of a diffraction-grating-free mid-wavelength infrared InP/In0.85Ga0.15As quantum well infrared photodetector focal plane array with a 640 × 512 format and a 15 m pitch. Combination of a normal incident radiation sensing ability of the high-x InxGa1-xAs quantum wells with a large gain property of the InP barriers led to a diffraction-grating-free quantum well infrared photodetector focal plane array with characteristics displaying great promise to keep the status of the quantum well infrared photodetector as a robust member of the new generation thermal imaging sensor family. The focal plane array exhibited excellent uniformity with noise equivalent temperature difference nonuniformity as low as 10% and a mean noise equivalent temperature difference below 20 mK with f/2 optics at 78 K in the absence of grating. Elimination of the diffraction-grating and large enough conversion efficiency (as high as 70% at a −3.5 V bias voltage) abolish the bottlenecks of the quantum well infrared photodetector technology for the new generation very small-pitch focal plane arrays.

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