High yield, highly manufacturable high-power wavelength stabilized DBR diode laser

Paoletti, R.; Codato, Simone; Coriasso, C.; Gaziano, F.; Gotta, P.; Maina, Alberto; Meneghini, G.; Morello, G.; Melchiorre, P. De; Pippione, Giulia; Rigó, István; Riva, E.; Rosso, M.; Stano, A.; Gattiglio, M.

doi:10.1117/12.2510510

Cited by 1 publication

(1 citation statement)

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“…With new application scenarios such as spectral beam combining and coherent optical communication, high requirements have been put forward for the spectral width and wavelength tunability of semiconductor lasers [1,2]. For example, the absorption bandwidth of nonlinear crystals used for frequency conversion is usually less than 100 pm [3,4]; The pulse light source used in LiDAR systems requires wavelength drift to be controlled within a few nanometers within the temperature range of -40 ℃ to 85 ℃ [5,6]; The tunable laser in the near-infrared band is a key device in the field of biomedical optics [7,8]. Therefore, semiconductor lasers with narrow spectral width and tunable central wavelength have broad application prospects and development needs.…”

Section: Introductionmentioning

confidence: 99%

Tunable narrow-linewidth monolithic master oscillator tapered power amplifier diode laser based on surface bragg gratings

Li,

He,

Zhou

et al. 2023

Eighteenth National Conference on Laser Technology and Optoelectronics

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In this paper, the tunable narrow spectral semiconductor laser technology based on on-chip DBR gratings is investigated. The surface DBR grating structure and electro-thermal tuning structure were designed, determined key parameters of grating structural, and the problem of multi-peak suppression was studied. Developed manufacturing technology for surface DBR gratings and tunable technology based on micro-electrode heaters and applied them to tapered MOPA laser chips, achieving output laser spectral locking while maintaining the high brightness of tapered semiconductor lasers. The tapered MOPA laser has achieved a narrow spectral width of 40 pm and a side mode suppression ratio of 35 dB under a continuous-wave power of 10.3 W. At a microelectrode heater current of 0.22 A, the wavelength can be continuously tuned over a range of 4.3 nm, with a maximum spectral width not exceeding 60 pm.

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