High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric

Rinkiö, Marcus; Johansson, Andreas; Zavodchikova, M. Y.; Toppari, J. Jussi; Nasibulin, Albert G.; Kauppinen, Esko I.; Törmä, Païvi

doi:10.1088/1367-2630/10/10/103019

Cited by 24 publications

(28 citation statements)

References 39 publications

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“…Here palladium was chosen for achieving a low contact resistance between electrodes and the carbon nanotube [21,22]. Also our previous work shows that Pd gives low contact resistance to our SWCNT FETs [14,19].…”

Section: Fabrication and Measurement Methodsmentioning

confidence: 99%

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Effect of humidity on the hysteresis of single walled carbon nanotube field‐effect transistors

Rinkiö

Zavodchikova

Törmä

et al. 2008

Physica Status Solidi (b)

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Single walled carbon nanotube field‐effect transistors (SWCNT FETs) are attributed as possible building blocks for future molecular electronics. But often these transistors seem to randomly display hysteresis in their transfer characteristics. One reason for this is suggested to be water molecules adsorbed to the surface of the gate dielectric. In this study we investigate the hysteresis of SWCNT FETs at different relative humidities. We find that SWCNT FETs having atomic layer deposited (ALD) HfO2 – TiO2 – HfO2 as a gate dielectric retain their ambient condition hysteresis better in dry N2 environment than the more commonly used SiO2 gate oxide. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Fabrication and Measurement Methodsmentioning

confidence: 99%

“…Several studies have shown that by utilizing the hysteresis, CNT FETs can be used as a memory element or sensors [5][6][7][8][9][10][11][12]. Nevertheless, the hysteresis so far has been reported as a more or less random property among the studied CNT FETs [7,9,13] and the challenge still is to be able to control the presence of hysteresis [14].…”

mentioning

confidence: 99%

Effect of humidity on the hysteresis of single walled carbon nanotube field‐effect transistors

Rinkiö

Zavodchikova

Törmä

et al. 2008

Physica Status Solidi (b)

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“…8. A strong hysteresis is seen, with an IorlIofJratio of 10z and a memory window of 4 V. The hysteresis effect of CNTFETs is attributed to absorbed molecules such as water [13] and more recently Rinkio et al have shown that a high-k dielectric gate CNTFET has strong hysteresis due to the charge trapping levels in the high-x dielectric [2]. The results in Fig.…”

Section: R Esults and Discussionmentioning

confidence: 86%

“…The use of a high-x dielectric as a gate insulator for a CNT field-effect transistor (CNTF ET) is of interest because it delivers improved performance due to an increased l orlloffratio. CNTFETs with a HfD z gate dielectric have also recently been researched for application in high-speed CNT memories and a strong hysteresis effect has been observed [2]. CNTs can be introduced onto HfO z using dispersion techniques, but CNT growth by chemical vapor deposition (CYD) would be more compatible with mainstream silicon technology.…”

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confidence: 99%

Fe/Ge Catalyzed Carbon Nanotube Growth on HfO<sub>2</sub> for Nano-Sensor Applications

Uchino¹,

Ayre²,

Smith³

et al. 2009

Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials

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Abstract-A carbon nanotube (CNT) growth process on Hf0 2 is reported for the first time for application in nano-sensors, The process uses a combination of Ge nanoparticles and ferric nitrate dispersion and achieves an increase in CNT density from 0.15 to 6.2 11m length/um" compared with the use of ferric nitrate dispersion alone. The growth process is validated by the fabrication of back-gate CNT field-effect transistors (CNTFETs) using AI source/drain (SID) contacts and a "2 anneal at 400°C.The transistors exhibit p-FET behavior with an Iml1offratio of 10 5 and a steep sub-threshold slope of 130 mY/dec. These results are rather sur prising, as earlier research in the literature on CNTFETs with AI SID electrodes showed n-FET behavior. The p-FET behavior is shown to be due to the H 2 anneal, which we ascribe to the smaller electron affinity of hydrogenised CNTs . Measurements of the temperature dependence of the drain current show low Schottky barrier height AI SID contacts after a "2 anneal, which tends to confirm this explanation. Recently, carbon nanotubes (CNTs) are gammg much attention for bio-sensing [1] because they offer the prospect real-time, label-free sensing for point-of-care diagnosis . The main advantage of CNTs for this application is a very high sensitivity due to the large surface to volume ratio of a carbon nanotube. The use of a high-x dielectric as a gate insulator for a CNT field-effect transistor (CNTF ET) is of interest because it delivers improved performance due to an increased l orlloffratio. CNTFETs with a HfD z gate dielectric have also recently been researched for application in high-speed CNT memories and a strong hysteresis effect has been observed [2]. CNTs can be introduced onto HfO z using dispersion techniques, but CNT growth by chemical vapor deposition (CYD) would be more compatible with mainstream silicon technology. However, CYD growth of CNTs on HfD z appears to be very difficult and to our knowledge no work has been reported on this topic to date.In this paper, a CNT growth process on HfO z is reported for the first time and this growth process is used to produce back gate CNTFETs with Al sourceldrain (SID) contacts. The novel growth process uses a combination of Ge nanoparticles and ferric nitrate dispersion to achieve a dramatic increase in CNT yield compared with the use of ferric nitrate dispersion alone. Electrical measurements on completed CNTFETs show p-FET behavior, an excellent l orlloff ratio of 105, and a steep sub-threshold slope of 130 mYIdec.978-1-4 244-4353-6 /09 /$ 25 .00 ©2 0 0 9 IEEE II. E XPERIMENTALA p" Si substrate (0.005 Q·cm) was employed as a back gate and a passivating SiOz layer was thermally grown, followed by the deposition of a HfO z layer by atomic-layer deposition, as shown in Fig.l . A 30nm SiOz layer was then deposited by plasma enhanced chemical vapor deposition (PECYD) on top of the HfO z and densified at 950°C. The SiOz layer was then implanted with s-ro" em", 20 keY Ge and annealed in N z at 600°C for 40 min to create Ge nanoparticles...

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“…Other important features of SWCNTs are mechanical strength and high elasticity [21,22]. Those properties determined SWCNTs utilization for applications in rigid [23][24][25] and flexible transparent electronics [26][27][28][29] as well as in optoelectronics [30][31][32]. Transparency, great electrical properties, and inherent nanometer size of SWCNT have motivated the interest to the SWCNT plasmonics.…”

Section: Introductionmentioning

confidence: 99%

Midinfrared Surface Plasmons in Carbon Nanotube Plasmonic Metasurface

et al. 2018

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We report an experimental observation of the midinfrared surface plasmon excited in a carbon nanotube plasmonic metasurface. The absorption of a 400-nm-thick single-walled carbon nanotube film perforated with laser-drilled subwavelength holes arranged in a 2D lattice is resonantly enhanced by 75% as compared with the unstructured film. The enhancement of absorption has a resonant behavior associated with the excitation of the surface plasmon and occurs at the wavelengths around 15 μm for the lattice period of 10 μm. The spectral position and the magnitude of the resonance are controlled entirely by the structure geometry and can be tuned in a broad range. We demonstrate that periodic patterning can be applied to tailor the bolometric performance of carbon nanotube thin films. Namely, the voltage response of the metasurface is enhanced by 100% at the wavelength of the plasmon resonance as compared with the unstructured film. We discuss mechanisms of the enhancement and compare experimental results with the finite-difference time-domain and scattering-matrix method simulations.

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High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric

Cited by 24 publications

References 39 publications

Effect of humidity on the hysteresis of single walled carbon nanotube field‐effect transistors

Effect of humidity on the hysteresis of single walled carbon nanotube field‐effect transistors

Fe/Ge Catalyzed Carbon Nanotube Growth on HfO<sub>2</sub> for Nano-Sensor Applications

Midinfrared Surface Plasmons in Carbon Nanotube Plasmonic Metasurface

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