Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

Oliver, Rachel A.; Kappers, Menno J.; Sumner, Joy; Datta, Ranjan; Humphreys, C. J.

doi:10.1016/j.jcrysgro.2005.12.075

Cited by 116 publications

(109 citation statements)

References 11 publications

Supporting

Mentioning

105

Contrasting

Order By: Relevance

“…The distinguishing features of the surface are broad 'hillocks' ~50 nm across and 2-3 nm high, and pits which we initially hypothesized to be linked to dislocations due to similar features being linked to dislocations in other nitride systems [10,11]. Table 1 gives the compositions, roughnesses and pit densities for all samples.…”

Section: Initial Investigation Of Epilayers: Compositions and Surfacementioning

confidence: 99%

Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors

Sadler

Kappers

Oliver

2010

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Section: Initial Investigation Of Epilayers: Compositions and Surfacementioning

confidence: 99%

Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors

Sadler

Kappers

Oliver

2010

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

“…Figure 4a) was collected from the left hand side of the wafer shown in figure 1b) and shows the step terrace surface of the AlGaN barrier surface. The small pits that are observed in the AFM indicate the locations where threading dislocations appear at the epi-layer surface [11]. The step terrace structure of this image shows a random step direction with relatively large terraces.…”

Section: Resultsmentioning

confidence: 79%

2 dimensional electron gas uniformity of GaN HFET layers on SiC

Wallis

Wright

Soley

et al. 2012

Journal of Crystal Growth

View full text Add to dashboard Cite

As GaN power transistor technology matures it is increasingly important to understand any links between substrate "quality", epi-layer growth and electrical characteristics of the 2-dimensional electron gas (2DEG) which forms the active part of devices. We present a study which makes use of full wafer mapping techniques to examine these relationships. Substrate off-cut is shown to be an important parameter in controlling the uniformity of GaN HFET device layers on SiC substrates.

show abstract

“…Following the GaN regrowth process, the samples were treated in-situ in SiH 4 at 860 ºC for 2 min to decorate the threading dislocations for accurate counting by atomic force microscopy (AFM). [7] The samples were also characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), transmission electron microscopy (TEM), and cathodoluminescence (CL).…”

Section: Methodsmentioning

confidence: 99%

Low dislocation GaN via defect-filtering, self-assembled SiO2-sphere layers.

Wang¹

2009

View full text Add to dashboard Cite

The III-nitride (AlGaInN) materials system forms the foundation for white solid-state lighting, the adoption of which could significantly reduce U.S. energy needs. While the growth of GaN-based devices relies on heteroepitaxy on foreign substrates, the heteroepitaxial layers possess a high density of dislocations due to poor lattice and thermal expansion match. These high dislocation densities have been correlated with reduced internal quantum efficiency and lifetimes for GaN-based LEDs. Here, we demonstrate an inexpensive method for dislocation reduction in GaN grown on sapphire and silicon substrates. This technique, which requires no lithographic patterning, GaN is selectively grown through self-assembled layers of silica microspheres which act to filter out dislocations. Using this method, the threading dislocation density for GaN on sapphire was reduced from 3.3 × 10 9 cm -2 to 4.0 ×10 7 cm -2 , and from the 10 10 cm -2 range to ~6.0 × 10 7 cm -2 for GaN on Si(111). This large reduction in dislocation density is attributed to a dislocation blocking and bending by the unique interface between GaN and silica microspheres.

show abstract

Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

Cited by 116 publications

References 11 publications

Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors

Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors

2 dimensional electron gas uniformity of GaN HFET layers on SiC

Low dislocation GaN via defect-filtering, self-assembled SiO2-sphere layers.

Contact Info

Product

Resources

About