Highly accurate virtual dynamic characterization of discrete SiC power devices

Abstract

Optimized low-inductive layouting of the package interconnections and external PCBs and bus-bars are necessary to benefit from Silicon Carbide (SiC) power devices, which allow inherently very fast switching transitions. In this paper, a comprehensive modeling procedure for highly accurate virtual dynamic characterization of discrete SiC power devices is described taking into account the 3D geometry of the internal and external interconnections of package as input. The modeling requirements are discussed on an example of a commercial 1.2 kV, 80 mΩ SiC Power MOSFET in a standard TO-247 package (Cree C2M0080120D). The software tools, Simplorer, Saber, Q3D and LTSpice, commonly used for modeling and simulation of power modules, are evaluated with respect to their modeling capabilities for SiC devices.

Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching

“…It was observed that the simulation time of switching transients when using the two-voltage dependent C-Vs, C(V gs , V ds ), is longer than when using the single-voltage dependent C-Vs, C(V gs =0, V ds ). Moreover, the Spice-based simulations shown in [25] shows better computational performance than the MATLAB Simulink simulations. In this paper, the simulation time is not prioritized and the main focus is placed on the simulation accuracy, mainly on a quantitative determination of the errors made by employing specific modelling simplifications for predicting the dynamic behavior of fast switching power semiconductor devices such as SiC power MOSFETs, as shown below.…”

“…This section presents the verification of the simulations results by means the double-pulse test measurements. The approach to model the package and PCB layout parasitics of the measurements setup together with the measurement setup itself was described in more detail in [25]. The dynamic performance of the same type 1.2 kV, 80 mΩ planar-gate SiC power MOSFET in TO-247-3 package is simulated using the settings of SIM2 and SIMREF specified in Table I.…”

“…The dynamic performance of the same type 1.2 kV, 80 mΩ planar-gate SiC power MOSFET in TO-247-3 package is simulated using the settings of SIM2 and SIMREF specified in Table I. As only two-and three-mutually coupled inductors can be modelled in MATLAB Simulink, the mutual couplings as existing between PCB layout tracks had to be further simplified in comparison to the electromagnetic model of the PCB layout presented in [25]. The equivalent circuits of a high voltage probe (Keysight 10076C 100:1, 500 MHz, 3.7 kVpk) used to measure the drain-source voltage; of a low voltage measurement probe (Keysight N2873A, 500 MHz, 200 V) used to measure the gate-source voltage; as well as of a current shunt (T&M TTSDN current shunt SSDN-414-05) used to measure the source current were included in the simulations.…”

Gate Capacitance Characterization of Silicon Carbide and Silicon Power mosfets Revisited

“…The diode (D b ) models the MOSFET's internal body-diode. The lumped resistors R gg represents the resistance of the MOSFET's distributed gate, whereas L g , L d , and L s represent a simplified model of the package parasitic stray inductances [6]. The capacitors C gs , C gd , and C ds are defined according…”

“…Accurate device models are a valuable tool for predicting device switching dynamics, power losses, and electromagnetic interference (EMI) Roger Stark, Alexander Tsibizov, Thomas Ziemann, Ulrike Grossner, and Ivana Kovačević-Badstübner are with the Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland (email: stark@aps.ee.ethz.ch; tsibizov@aps.ee.ethz.ch; kovacevic@aps.ee.ethz.ch; ziemann@aps.ee.ethz.ch; ulrike.grossner@ethz.ch), contact e-mail: ulrike.grossner@ethz.ch. noise generation in a computationally efficient and accurate way [5], [6]. Compact models based on the equivalent circuit shown in Fig.…”