Highly Asymmetric Epitaxial Designs for Increased Power and Efficiency in kW-Class GaAs-Based Diode Laser Bars

Miah, Md. Jarez; Boni, A.; Martin, D.; Casa, Pietro Della; Crump, Paul

doi:10.1109/islc51662.2021.9615832

Cited by 3 publications

(4 citation statements)

References 7 publications

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“…We investigated in this work GaAs-based diode laser bars based on the epitaxial layer reported in [4,12]. The epitaxial layer structure makes use of the extreme-triple-asymmetric concept following the same design as discussed in [4,5,13,14]. The 1-cm wide laser bars presented in this paper consist of 8 broad-area (BA) emitters, each having W ~ 1093 µm stripes optically isolated from each other by deep grooves (isolation trenches) etched into the semiconductor.…”

Section: Design Of Improved Lateral Emitter Structuresmentioning

confidence: 99%

Tailored in-plane thermal profiles for narrower lateral far-field in kilowatt-class 9xx nm diode laser bars

Miah,

Karow,

Elattar

et al. 2023

High-Power Diode Laser Technology XXI

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Section: Design Of Improved Lateral Emitter Structuresmentioning

confidence: 99%

Tailored in-plane thermal profiles for narrower lateral far-field in kilowatt-class 9xx nm diode laser bars

Miah,

Karow,

Elattar

et al. 2023

High-Power Diode Laser Technology XXI

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“…High-power broad-area laser diodes (HP-BALs) have emerged as primary pump sources for fiber and solid-state laser systems for diverse industrial applications, owing to their large power conversion efficiency (PCE), reliability, and cost-effectiveness [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. In the dynamic landscape of fiber lasers and solid-state lasers, there is an increasing demand for such lasers, capable of delivering even larger output power and PCE.…”

Section: Introductionmentioning

confidence: 99%

“…In the last 20 years, breakthroughs in terms of both power and efficiency have been reported [7][8][9][10][11][12][13]. In 2008, Petrescu-Prahova et al demonstrated BALs with 100 µm emitter width, operating at room temperature, and achieving an output power of 25.3 W from both facets [14].…”

Section: Introductionmentioning

confidence: 99%

Double-Junction Cascaded GaAs-Based Broad-Area Diode Lasers with 132W Continuous Wave Output Power

Wang,

Tan,

Shao

et al. 2024

Photonics

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Improving the output power and efficiency of broad-area diode lasers is a prerequisite for the further development of fiber lasers, solid-state laser industries, and direct semiconductor laser applications. At present, the large amount of Joule heat generated by large drive currents and limited wall-plug efficiency presents the largest challenge for improving these lasers. In this paper, a multi-junction cascade laser with low Joule heat generation is demonstrated, showing large power and conversion efficiency. We fabricated devices with different junction numbers and compared their output power. We present double-junction lasers emitting at ~915 nm with an emitter width of 500 μm, delivering 132.5 W continuous wave output power at 70 A, which is the highest power reported so far for any single-emitter laser. The power conversion efficiencies are 66.7% and 60%, at 100 W and 132 W, respectively.

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“…The effectiveness of the ETAS-based design for higher P opt and η E at high I opt , over ASLOC-based structures has been demonstrated in single BA lasers at λ = 970 nm [21] and in 1-cm laser bars at λ = 940 nm [27]- [29]. In this paper, we evaluate the performance of wavelength-stabilized BA lasers at λ = 970 nm realized employing the above-described baseline ASLOC and ETAS structures, following on from [19].…”

Section: Introductionmentioning

confidence: 99%

60% Efficient Monolithically Wavelength-Stabilized 970-nm DBR Broad-Area Lasers

et al. 2022

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Progress in epitaxial design is shown to enable increased optical output power P opt and power conversion efficiency η E and decreased lateral far-field divergence angle in GaAs-based distributed Bragg reflector (DBR) broad-area (BA) diode lasers. We show that the wavelength-locked power can be significantly increased (saturation at high bias current is mitigated) by migrating from an asymmetric large optical cavity (ASLOC) based laser structure to a highly asymmetric (extreme-triple-asymmetric (ETAS)) layer design. For wavelength-stabilization, 7 th order, monolithic DBRs are etched on the surface of fully grown epitaxial layer structures. The investigated ETAS reference Fabry-Pérot (FP) BA lasers without DBRs and with 200 µm stripe width and 4 mm cavity length provide P opt = 29 W (still increasing) at 30 A in continuous-wave mode at room temperature, in contrast to the maximum P opt = 24 W (limited by strong power saturation) of baseline ASLOC lasers. The reference ETAS FP lasers also deliver over 10% higher η E at P opt = 24 W. On the other hand, in comparison to the wavelength-stabilized ASLOC DBR lasers, ETAS DBR lasers show a peak power increment from 14 W to 22 W, and an efficiency increment from 46% to 60% at P opt = 14 W. A narrow spectral width (< 1 nm at 95% power content) is maintained across a very wide operating range. Consistent with earlier studies, a narrower far-field divergence angle and consequently an improved beam-parameter product is also observed, compared to the ASLOC-based lasers.

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Highly Asymmetric Epitaxial Designs for Increased Power and Efficiency in kW-Class GaAs-Based Diode Laser Bars

Cited by 3 publications

References 7 publications

Tailored in-plane thermal profiles for narrower lateral far-field in kilowatt-class 9xx nm diode laser bars

Tailored in-plane thermal profiles for narrower lateral far-field in kilowatt-class 9xx nm diode laser bars

Double-Junction Cascaded GaAs-Based Broad-Area Diode Lasers with 132W Continuous Wave Output Power

60% Efficient Monolithically Wavelength-Stabilized 970-nm DBR Broad-Area Lasers

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