2011
DOI: 10.1364/ome.1.000413
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Highly bismuth-substituted, record-performance magneto-optic garnet materials with low coercivity for applications in integrated optics, photonic crystals, imaging and sensing

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Cited by 19 publications
(29 citation statements)
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“…The coercivity of Bi 1.8 Lu 1.2 Fe 3.6 Al 1.4 O 12 garnet films of 1 µm thickness prepared onto GGG substrates was only about 45 Oe (green curve), and their saturation magnetization was about 350 Oe, as shown in Fig.4. The almost-linear character of the magnetization curves observed in Bi 1.8 Lu 1.2 Fe 3.6 Al 1.4 O 12 garnet films below magnetic saturation indicates that a significant component of the film's magnetization lies in the film plane [13]. The observed magnetic domain patterns in these two magneto-optic garnet thin-film materials were also totally different, as shown in the inset of Fig.…”
Section: Wavelength (Nm) Power Transmission (%)mentioning
confidence: 91%
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“…The coercivity of Bi 1.8 Lu 1.2 Fe 3.6 Al 1.4 O 12 garnet films of 1 µm thickness prepared onto GGG substrates was only about 45 Oe (green curve), and their saturation magnetization was about 350 Oe, as shown in Fig.4. The almost-linear character of the magnetization curves observed in Bi 1.8 Lu 1.2 Fe 3.6 Al 1.4 O 12 garnet films below magnetic saturation indicates that a significant component of the film's magnetization lies in the film plane [13]. The observed magnetic domain patterns in these two magneto-optic garnet thin-film materials were also totally different, as shown in the inset of Fig.…”
Section: Wavelength (Nm) Power Transmission (%)mentioning
confidence: 91%
“…This material possesses high uniaxial magnetic anisotropy (with its magnetization direction perpendicular to the film's plane) and also excellent magnetic memory properties. On the other hand, Bi-substituted lutetium iron garnet material of composition Bi 1.8 Lu 1.2 Fe 3.6 Al 1.4 O 12 features a magneto-soft behaviour with almost in-plane magnetization direction and high specific Faraday rotation [13]. In this paper, we report on the properties of an all garnet multilayer structure which is formed by sandwiching a garnet layer of composition type Bi 1 Fig.…”
Section: Introductionmentioning
confidence: 90%
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“…RF magnetron sputtering allows precise control over the thin film deposition process parameters, thus addressing the issues related to synthesizing high-quality thin films and multilayers wherein each layer’s chemical composition (stoichiometry) must be controlled accurately [10,11,19,20,21]. To investigate the potential of obtaining special magnetic properties that are not attainable easily using single-layer garnet thin films, we prepare all-garnet multilayer structures using two record-performance highly-Bi-substituted iron garnet materials having dissimilar magnetic behaviors (magnetic anisotropy, switching fields and saturation magnetizations).…”
Section: Introductionmentioning
confidence: 99%