Highly concentrated IZO colloidal nanocrystals with blue/orange/red three-colors emission

Alamdari, Sanaz; Ghamsari, M. Sasani; Ara, M.H. Majles; Efafi, Babak

doi:10.1016/j.matlet.2015.06.001

“…As reported in previous studies, [33][34][35][36] both sol and dopant ion concentrations affect the optical properties of thin ZnO films. Moreover, the absorbance peak of ZnO sol changed considerably due to ZnAc-concentration variation.…”

Section: Resultssupporting

confidence: 60%

Impact of nanostructured thin ZnO film in ultraviolet protection

Ghamsari

¹

,

Alamdari

²

,

Han

³

et al. 2016

IJN

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“…Figure demonstrates the XPS O 1s spectra of as-synthesized samples, with distinct peaks centered around ∼530.0 (O L ), 531.1–531.6 (O V ), and 532 eV (O OH ), attributed to presence of lattice oxygen in the Zn–O matrix, surface defects, especially oxygen vacancies in the ZnO and chemisorbed oxygen-containing species on the surface of the ZnO, respectively. ,− The total areal percentage was calculated from the Gaussian fitted peaks, which exposed the peak corresponding to O V increases with increase in Hf content for 3% and 6% and then starts decreasing with further addition of hafnium from 9% to 15% in comparison with the pure ZnO sample. Furthermore, the development of oxygen vacancy induced by hafnium doping can be represented using Kröger–Vink notation as shown in eqs and : Interestingly, according to effective ionic radii theory by Shannon, the ionic radii of the cations, Zn 2+ (0.74 Å) and Hf 4+ (0.78 Å); being similar, does not contribute to the formation of atomic defects after substitutional doping arising from the lattice strain otherwise.…”

Section: Resultsmentioning

confidence: 99%

“…Highest transmission is achieved for 6% doped Hf-ZnO, while lowest transmission became prominent for 15% doped Hf-ZnO between 380 and 780 nm. Using eq , the optical band gap ( E g ) of Hf-ZnO thin films was calculated and showed in the Tauc plot (Figure b). where the absorption coefficient is α and photon energy is represented by h ν Figure (b) shows the plot of (α h ν) 2 versus h ν and further extrapolation of a straight line at α = 0 results in calculating the bandgap of the as-prepared samples.…”

Section: Resultsmentioning

confidence: 99%

“…where the absorption coefficient is α and photon energy is represented by hν. 55 Figure 6(b) shows the plot of (αhν) 2 versus hν and further extrapolation of a straight line at α = 0 results in calculating the bandgap of the as-prepared samples. Initially optical band gap increases from 3.1 (ZnO) to 3.2 eV (6% Hf-ZnO), corresponding to band widening, and with an increase in hafnium concentration up to 6%, but with further addition of hafnium, the bandgap decreases to 3.0 eV (15% Hf-ZnO).…”

mentioning

confidence: 99%

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Role of Hafnium Doping on Wetting Transition Tuning the Wettability Properties of ZnO and Doped Thin Films: Self-Cleaning Coating for Solar Application

Nundy

¹

,

Ghosh

²

,

Tahir

³

et al. 2021

ACS Appl. Mater. Interfaces

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Herein, we successfully synthesized high-quality Hf-ZnO thin films with various Hf contents (0, 3, 6, 9, 12, and 15 at. %), which showed both superhydrophilic (6% Hf-ZnO) and ultrahydrophobic (15% Hf-ZnO) wetting behavior. Different characterization methods were opted to recognize the structural (XRD, SEM, AFM) and defect properties (XPS) of the pristine and doped materials, to understand the mechanisms underlying the tuning of wetting behavior (contact angle). Hafnium doping plays a noteworthy role in tuning the morphology of the ZnO nanostructures, roughness of the material surface, generation of defects, Lewis acid–base interactions, and wettability properties. We achieved a superhydrophilic surface with 6% Hf-ZnO owing to a smooth surface, less basicity, and maximum concentration of oxygen vacancies, and also an ultrahydrophobic surface with 15% Hf-ZnO because of the rough surface, high basicity, and minimum concentration of oxygen vacancies. The as prepared Hf-ZnO samples showed stable performance (stability, wearability, weatherability, and antifouling) under real-life conditions marking them multifunctional and biosafe material to be effectively used in solar and building’s window. A wetting mechanism was established to relate the wetting behavior of the samples to oxygen vacancies (active sites for water dissociation: resulted due to charge mismatch of host cation (Zn2+) by the doped cation (Hf4+)), roughness (smooth surface (Wenzel) with minimum R rms (0.588) portraying hydrophilic property and rough caltropic surface (Cassie–Baxter) with maximum R rms (2.522) portraying hydrophobic property), basicity (H2O: Lewis Base; ZnO: Lewis acid; HfO2: Lewis base) and morphology (tube-like structure (0–6% Hf-ZnO) and caltrop-like structure (12–15% Hf-ZnO)).

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“…As a result, atoms on the surface of films will have a high motion energy, which lead to the electron can easily to move from valence band to conduction band well. For this case, the mobility is increased and also carrier concentration; thus, it is a positive effect to the electrical properties [56].…”

Section: Optical and Electricalmentioning

confidence: 93%

High Performance of IZO Coated on PET Substrate for Electroluminescence Device Using Oxygen Plasma Treatment

Poonthong

¹

,

Mungkung

²

,

Arunrungrusmi

³

et al. 2021

International Journal of Photoenergy

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Thin films of indium zinc oxide (IZO) were deposited on polyethylene terephthalate (PET) substrate with varying plasma power (from 100 W to 300 W) using the radio-frequency (RF) magnetron sputtering technique and electroluminescence (EL) devices. The IZO films that were obtained from this process were treated with oxygen plasma powers using the plasma-enhanced chemical vapor deposition (PECVD) system. After this treatment, the microstructural, electrical, and optical properties of IZO films were observed and reported. The result showed that the IZO/PET films was fabricated at the lowest resistivity ( 2.83 × 10 − 3 Ω · cm ), while the optical characterization displayed the maximum transmittance of 95% in the visible region with a smooth morphology and good crystalline structured, affected by the 300 W of plasma power with the optimum carrier concentration ( 4.93 × 10 21 c m − 3 ) and hall mobility (42.12 cm2/V·sec), respectively. The luminance properties and the EL efficiency were also investigated and shown a 300 W highest point of plasma power with 84 cd/m2 and 0.924 lm/W. The film properties were found responsible for producing and improving the performance of IZO/PET substrate, suitable for displaying the devices.

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Highly concentrated IZO colloidal nanocrystals with blue/orange/red three-colors emission

Cited by 28 publications

References 23 publications

Impact of nanostructured thin ZnO film in ultraviolet protection

Impact of nanostructured thin ZnO film in ultraviolet protection

Role of Hafnium Doping on Wetting Transition Tuning the Wettability Properties of ZnO and Doped Thin Films: Self-Cleaning Coating for Solar Application

High Performance of IZO Coated on PET Substrate for Electroluminescence Device Using Oxygen Plasma Treatment

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