Highly concentrated ozone gas supplied at an atmospheric pressure condition as a new oxidizing reagent for the formation of SiO2 thin film on Si

Koike, Kunihiko; Ichimura, Shingo; Kurokawa, Akira; Nakamura, Ken

doi:10.1007/s11664-002-0155-y

Cited by 3 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is primarily due to the change in oxidation mechanism. 35) An activation energy of 0.28 eV at the higher temperature range (>650 °C) is closer to the reported value of 0.22 eV for temperatures between 600 °C-800 °C. 34) This indicates that the mechanism of oxidation changes from interface reaction-limited growth to diffusion-limited growth.…”

Section: Resultssupporting

confidence: 77%

“…[27][28][29][30] Even though O 3 is known to decompose at 250 °C, several reports regarding the thermal oxidation of silicon substrate using O 3 at temperatures above 250 °C are available. [31][32][33][34][35][36] Using a low pressure cold-wall chamber, O 3 can be transported and adsorbed onto the surface of substrate effectively. The adsorbed O 3 dissociates into O 2 molecule and O radical, which is a key factor for achieving higher oxidation capability in comparison to oxidation using pure O 2 .…”

Section: 20-26)mentioning

confidence: 99%

See 1 more Smart Citation

Ozone based high-temperature atomic layer deposition of SiO₂thin films

Hwang¹,

Qin²,

Kim³

et al. 2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this paper, atomic layer deposition of SiO2 thin films was investigated with Si2Cl6 and O3/O2 (400 g m−3). O3/O2 is not preferred for high-temperature (>400 °C) processes due to its lower decomposition temperature, especially in a furnace-type chamber. However, with Si oxidation test using a cold-wall chamber, we have demonstrated the reactivity of O3/O2 up to 800 °C in comparison with O2 and H2O. The ALD of SiO2 films was examined at deposition temperatures from 500 °C to 700 °C. The growth rate at 600 °C was saturated to 0.03 nm/cycle with Si2Cl6 exposure over 1.2 × 105 L. O3/O2 also showed ALD-like saturation behaviors for exposures over 2.4 × 106 L. The ALD films deposited at 600 °C exhibited relatively smooth surface roughness (<0.18 nm) and low wet etch rate (1.6 nm min−1, 500:1 HF) that are comparable with PECVD SiO2 deposited at 250 °C and LPCVD SiO2 deposited at 450 °C.

show abstract

Section: Resultssupporting

confidence: 77%

Section: 20-26)mentioning

confidence: 99%

Ozone based high-temperature atomic layer deposition of SiO₂thin films

Hwang¹,

Qin²,

Kim³

et al. 2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

Optimization of passivation layer on the front surface of N-type tunnel oxide passivated contact solar cells

Zhang,

Peng,

Wang

et al. 2024

Thin Solid Films

View full text Add to dashboard Cite

Effects of dielectric barrier discharges on silicon surfaces: Surface roughness, cleaning, and oxidation

Michel

Giza

Krumrey

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

Silicon wafers were exposed to a dielectric barrier discharge (DBD) at atmospheric pressure, which was ignited by applying a high voltage (>12 kV peak voltage) to a small gap (d(g)=300 mu m) above the wafer surface in an oxygen process gas atmosphere. The effect of the DBD on H-terminated silicon and native silicon oxide surfaces was investigated in situ and ex situ by means of Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy (XPS). The influence of the treatment on surface roughness was studied by atomic force microscopy. In order to determine the thickness of the newly formed oxide under DBD influence, the method of calculating the oxide thickness from the Si 2p peak ratio in the XPS spectrum, which has so far been described for thermal oxides only, was adopted with x-ray reflectometry calibration samples. Additionally, infrared spectroscopy and spectroscopic ellipsometry were used to verify the XPS measurements. The calculated thickness values can be fitted with the growth law d=d(0) ln[(t /tau)+k], with d being the oxide thickness, grown during DBD exposure time t. Oxide thicknesses of more than 3 nm could be achieved within 350 s DBD exposure time. Our analysis of infrared spectra, XPS, and ellipsometry leads us to conclude that the newly formed oxide is porous with a pore fraction of roughly 10%

show abstract

Highly concentrated ozone gas supplied at an atmospheric pressure condition as a new oxidizing reagent for the formation of SiO2 thin film on Si

Cited by 3 publications

References 9 publications

Ozone based high-temperature atomic layer deposition of SiO₂thin films

Ozone based high-temperature atomic layer deposition of SiO₂thin films

Optimization of passivation layer on the front surface of N-type tunnel oxide passivated contact solar cells

Effects of dielectric barrier discharges on silicon surfaces: Surface roughness, cleaning, and oxidation

Contact Info

Product

Resources

About

Highly concentrated ozone gas supplied at an atmospheric pressure condition as a new oxidizing reagent for the formation of SiO2 thin film on Si

Cited by 3 publications

References 9 publications

Ozone based high-temperature atomic layer deposition of SiO2thin films

Ozone based high-temperature atomic layer deposition of SiO2thin films

Optimization of passivation layer on the front surface of N-type tunnel oxide passivated contact solar cells

Effects of dielectric barrier discharges on silicon surfaces: Surface roughness, cleaning, and oxidation

Contact Info

Product

Resources

About

Ozone based high-temperature atomic layer deposition of SiO₂thin films

Ozone based high-temperature atomic layer deposition of SiO₂thin films