Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices

In-situ production of PH3 from red phosphorus and atomic hydrogen

“…Although red phosphorus has a fairly high vapor pressure under vacuum [31], direct reactions between phosphorus vapor and H atoms in the gas phase must be minor. Finally, the highest PH 3 density observed in the present system, 1.3×10 13 cm -3 , is more than or comparable to those in many catalytic (hot-wire) [1][2][3][4][5][6][7][8][9] and plasma-enhanced [9][10][11][12][13][14][15][16][17][18][19] chemical vapor deposition processes. In other words, the amount of PH 3 produced by this technique may be enough for use in industrial applications.…”

“…PH 3 is one of the most important dopant gases in semiconductor industries and has been used in many chemical vapor deposition processes [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. The problem is that PH 3 is not only highly toxic but also explosive.…”

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

“…Furthermore, for the PECVD samples the boron doping efficiency, which is the ratio of the carrier concentration to the boron concentration in the solid phase, is also very low (10-20%) [12]. Therefore, the highest conductivity hitherto reported for p-type nc-Si:H prepared by PECVD is only around 10 S/cm [12,13], whereas for HWCVD p-type nc-Si:H a conductivity value as high as 100 S/cm has been reported [14,15], which is ten times higher than the PECVD samples. Therefore, HWCVD is becoming a promising method to achieve highly conductive p-type nc-Si:H films.…”

Catalytic Decomposition of PH3 on Heated Tungsten Wire Surfaces

“…PH 3 is one of the most important dopant gases in the semiconductor industry; it is used not only in plasmaenhanced chemical vapor deposition (CVD) processes [1][2][3][4][5][6][7][8][9][10][11] but also in catalytic (hot-wire) CVD processes. [11][12][13][14][15][16][17][18][19][20] Recently, Hayakawa et al have reported that phosphorus can be doped in crystalline silicon substrates by exposing the substrates to radical species produced in the catalytic decomposition of PH 3 or a mixture of PH 3 and H 2 on heated tungsten surfaces. 12,13) They have also demonstrated that this treatment can increase solar cell efficiency by reducing surface recombination rates at the interfaces between amorphous and crystalline silicon.…”