Highly conductive CuInSe2 nanocrystals with inorganic surface ligands

Kergommeaux, Antoine de; Fiore, Angela; Faure‐Vincent, Jérôme; Chandezon, F.; Proń, Adam; Bettignies, Rémi de; Reiß, Peter

doi:10.1016/j.matchemphys.2012.08.014

Cited by 15 publications

(16 citation statements)

References 19 publications

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“…Literature shows, thin films of SnS have been synthesized by different techniques such as the vacuum evaporation [14], electro-deposition [15], electroless deposition [13], sputtering [16], chemical vapour deposition (CVD) [17], plasmaenhanced CVD [18], spray pyrolysis [19,20], pulsed laser irradiation [21], brush plated technique [22], etc. There are many aspects to take into consideration to achieve good performance of the optoelectronic devices based on the SnS thin films [23,24]. The common problems in thin films of SnS concern the stoichiometry, surface topography, purity, suitable bandgap, high optical absorption coefficient, low resistivity, high carrier density and mobility [6,25].…”

Section: Introductionmentioning

confidence: 99%

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

Chaki¹,

Chaudhary²,

Deshpande

2016

J. Semicond.

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The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 ı C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I -V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

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Section: Introductionmentioning

confidence: 99%

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

Chaki¹,

Chaudhary²,

Deshpande

2016

J. Semicond.

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“…There are ways to increase the conductivity in NC solids for example by using inorganic metal chalcogenide complex ligands (MCCs) but these involve the use of toxic and hazardous anhydrous hydrazine and are hard to apply in industrial large‐scale dimensions. Chemical treatments with 1,2‐ethanedithiol and ethanethiol show that photovoltaic device efficiency and electrical transport of NC films can be enhanced but ligand exchange is performed after the deposition of the NCs confining the flexibility of device fabrication.…”

Section: Introductionmentioning

confidence: 99%

“…At the same time, these organic surfactant molecules inhibit electronic interparticle interactions resulting in insulating behavior of NC assemblies. [7] There are ways to increase the conductivity in NC solids for example by using inorganic metal chalcogenide complex ligands (MCCs) [18,19] but these involve the use of toxic and hazardous anhydrous hydrazine and are hard to apply in industrial large-scale dimensions.…”

Section: Introductionmentioning

confidence: 99%

Virtually Bare Nanocrystal Surfaces: Significantly Enhanced Electrical Transport in CuInSe₂ and CuIn_1−xGa_xSe₂ Thin Films upon Ligand Exchange with Thermally Degradable 1‐Ethyl‐5‐Thiotetrazole

Lauth

Marbach

Meyer

et al. 2013

Adv Funct Materials

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A facile and safe ligand exchange method for readily synthesized CuInSe2 (CIS) and CuIn1‐xGaxSe2 (CIGS) nanocrystals (NCs) from oleylamine to 1‐ethyl‐5‐thiotetrazole, preserving the colloidal stability of the chalcopyrite structure, is presented. 1‐Ethyl‐5‐thiotetrazole as thermally degradable ligand is adapted for the first time for trigonal pyramidal CIS (18 nm), elongated CIS (9 nm) and CIGS NCs (6 nm). Exchanged NC solutions are processed onto gold electrodes yielding ordered thin films. These films are thermally annealed at 260 °C to completely remove 1‐ethyl‐5‐thiotetrazol leaving individual closely assembled NCs with virtually bare surfaces. The current–voltage characteristics of the NC solids are measured prior to ligand thermolysis in the dark and under illumination and after ligand thermolysis in the same manner. The conductivity of trigonal pyramidal CIS increases by four orders of magnitude (1.4 × 10−9 S cm−1 (dark) to 1.4 × 10−5 S cm−1 (illuminated)) for ligand‐free NC films. Elongated CIS NC films show a three orders of magnitude conductivity increase and CIGS NC films exhibit improved conductivity by two orders of magnitude. Conductivity enhancement thereby depends on the NC size accentuating the role of trap‐states and internal grain boundaries in ligand‐free NC solids for electrical transport. This approach for the first time offers the possibility to address chalcopyrite materials’ electrical properties in a virtually ligand‐free state.

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“…For these studies interdigitated golde lectrodes of at hickness of 40 nm, ad istance of 5 mma nd at otal length of 1cmh ave been applied. [33] The tBuSH-capped CIS NCs reach ac urrent density of around 800 mA cm À2 under 5Vappliedb iasv oltage, which represents an approximately 400 times higherv alue than that obtained with DDT-capped NCs. The conductivity of the tBuSH-capped CIS NCs is calculated as 2.5 .…”

Section: Resultsmentioning

confidence: 86%

“…Electrical measurements were performed on drop‐cast films of t BuSH‐capped CIS NCs and compared to measurements on DDT‐capped NCs of similar size (Figure ). For these studies interdigitated gold electrodes of a thickness of 40 nm, a distance of 5 μm and a total length of 1 cm have been applied . The t BuSH‐capped CIS NCs reach a current density of around 800 mA cm −2 under 5 V applied bias voltage, which represents an approximately 400 times higher value than that obtained with DDT‐capped NCs.…”

Section: Resultsmentioning

confidence: 98%

Direct Synthesis of Highly Conductive tert‐Butylthiol‐Capped CuInS₂ Nanocrystals

et al. 2015

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tert-butylthiol (tBuSH) is used as the sulfur source, surface ligand and co-solvent in the synthesis of CuInS2 nanocrystals (NCs). The presented method gives direct access to short-ligand-capped NCs without post-synthetic ligand exchange. The obtained 5 nm CuInS2 NCs crystallize in the cubic sphalerite phase with space group F-43m and a lattice parameter a=5.65 Å. Their comparably large optical and electrochemical band gap of 2.6-2.7 eV is attributed to iodine incorporation into the crystal structure as reflected by the composition Cu1.04 In0.96 S1.84 I0.62 determined by EDX. Conductivity measurements on thin films of the tBuSH-capped NCs result in a value of 2.5(.) 10(-2) S m(-1) , which represents an increase by a factor of 400 compared to established dodecanethiol-capped CuInS2 NCs.

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Highly conductive CuInSe2 nanocrystals with inorganic surface ligands

Cited by 15 publications

References 19 publications

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

Virtually Bare Nanocrystal Surfaces: Significantly Enhanced Electrical Transport in CuInSe₂ and CuIn_1−xGa_xSe₂ Thin Films upon Ligand Exchange with Thermally Degradable 1‐Ethyl‐5‐Thiotetrazole

Direct Synthesis of Highly Conductive tert‐Butylthiol‐Capped CuInS₂ Nanocrystals

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Highly conductive CuInSe2 nanocrystals with inorganic surface ligands

Cited by 15 publications

References 19 publications

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

Virtually Bare Nanocrystal Surfaces: Significantly Enhanced Electrical Transport in CuInSe2 and CuIn1−xGaxSe2 Thin Films upon Ligand Exchange with Thermally Degradable 1‐Ethyl‐5‐Thiotetrazole

Direct Synthesis of Highly Conductive tert‐Butylthiol‐Capped CuInS2 Nanocrystals

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Virtually Bare Nanocrystal Surfaces: Significantly Enhanced Electrical Transport in CuInSe₂ and CuIn_1−xGa_xSe₂ Thin Films upon Ligand Exchange with Thermally Degradable 1‐Ethyl‐5‐Thiotetrazole

Direct Synthesis of Highly Conductive tert‐Butylthiol‐Capped CuInS₂ Nanocrystals