Highly conductive n- and p-type CuInO thin films by reactive evaporation

Low temperature thermopower and electrical conductivity in highly conductive CuInO2thin films

“…Moreover, preparation of dense targets which is assumed to improve the properties of lms is a difficult and challenging task. In our previous publication on CuInO 2 , 28 we reported our success in depositing this compound into highly conductive p-and n-type thin lms using the reactive evaporation technique along with their preliminary physical characterization and the high temperature conductivity measurement data. 28 In the present paper, a detailed analysis of the low and high temperature conductivity of these thin lms, which manifest conductivity between 20 and 125 S cm À1 at room temperature, using Mott's, Seto's and Arrhenius models is reported.…”

“…In our previous publication on CuInO 2 , 28 we reported our success in depositing this compound into highly conductive p-and n-type thin lms using the reactive evaporation technique along with their preliminary physical characterization and the high temperature conductivity measurement data. 28 In the present paper, a detailed analysis of the low and high temperature conductivity of these thin lms, which manifest conductivity between 20 and 125 S cm À1 at room temperature, using Mott's, Seto's and Arrhenius models is reported. The Seebeck coefficient variations with temperature in the low temperature regime are discussed and the high power factor they exhibit is taken note of in light of their suitability for practical applications in thermoelectric energy conversion.…”

Electrical and transport properties of nearly stoichiometric transparent n‐type silver indium oxide thin films

“…). Similar tendencies have been explained earlier in nickel pellets and group VB metals and delafossite CIO . The Seebeck coefficient is defined by the equation where E F is the separation of the Fermi level from the valence‐band maximum or conduction‐band minimum depending on the type of the film, k B is the Boltzmann constant, T is the temperature at which the thermopower is determined and A is the parameter that depends on the scattering process.…”

“…Studies show that one measure to increase conductivity without compromising transparency is to increase the mobility of the carriers while keeping the carrier concentration unaffected. Recently, we reported fabrication of highly conducting (∼10 2 S cm −1 ) n‐ and p‐type delafossite material CuInO with high‐mobility carriers, possessing ∼80% transmittance . AgInO 2 (AIO) is another I‐III‐VI TCO, showing good conductivity and high transparency, that can be intrinsically doped with p‐ and n‐type electrical conductivity by varying the Ag/In ratio .…”

Thermoelectric Properties of Oxide Semiconductors

“…The XRD graph of Cu 2 InO 4 thin films in Figure 3(a) demonstrated that unannealed and low temperature (600°C) would not be able to make the grown material crystalline due to low thermal energy for bonding. But as we increased the temperature above 600°C, the sample is converted into crystalline structure with preferred orientation (006) at 2θ = 33.086° [11,12]. It is also observed that the intensity of this plane is increased as we further increase the annealing temperature, which suggested that carriers now get enough energy to sit down at a particular position in planes of the crystal.…”