Highly conductive two-dimensional electron gas at the interface of Al2O3/SrTiO3

Synthesis of Oxide Interface-Based Two-Dimensional Electron Gas on Si

“…Typical metallic behaviors are observed for all four samples, and the very weak R s upturn occurs at a low temperature. The resistance upturn can be attributed to the Kondo scattering or the formation of a certain amount of defects (Figure c), and similar behaviors have been seen in a previous work . The electron Hall mobility (μ) increases significantly upon cooling, as shown in Figure d, while corresponding n s varies slightly with the temperature (Figure e).…”

“…The resistance upturn can be attributed to the Kondo scattering or the formation of a certain amount of defects (Figure 3c), and similar behaviors have been seen in a previous work. 47 The electron Hall mobility (μ) increases significantly upon cooling, as shown in Figure 3d, while corresponding n s varies slightly with the temperature (Figure 3e). Figure 3f summarizes the μ values with respect to the oxygen partial pressures.…”

“…In STO-based heterostructures, besides epitaxially grown crystalline overlayers, the 2DEG heterostructures with amorphous oxide overlayers have been well-investigated in recent years for their simple fabrication process and relatively high mobility. − Researchers demonstrated that metallic interfaces could be realized in SrTiO 3 -based heterostructures with various amorphous insulating overlayers, among which amorphous Al 2 O 3 (aAO) is relatively simple in composition. , As a result of the redox reaction, the formation of oxygen vacancies near the interface in the STO side gives rise to a metallic interface. ,− In light of the easy fabrication for potential electronic applications, the integration of 2DEG on a silicon wafer is more accessible in amorphous Al 2 O 3 /SrTiO 3 (aAO/STO) heterostructures.…”

SrTiO3@NiFe LDH core–shell composites for photocatalytic CO2 conversion

“…The lattice oxygen in SrTiO 3 was released to the gas phase due to the dissociation of Ti–O bond, usually the surface Ti–O bond, thus forming oxygen vacancies (V O ) and Ti 3+ , as denoted in eqn (1) and (2). 15,41,42 …”

Magnetic Conductive Outer Layer in Oxygen‐Deficient TiO2 Single Crystals

“…This proves that the annealing leads to a chemical reduction of Ti. Normalized Ti 2p spectra show stronger Ti 3+ signal than those of pristine TiO 2 crystals, indicating the generation of more oxygen vacancies in the modified surface during the reduction process . Indeed, each oxygen vacancy releases two electrons that can occupy the initially empty Ti 3 d band states, resulting in Ti 3+ or even Ti 2+ low‐binding energy components.…”