2023
DOI: 10.1021/acsaelm.3c01376
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Highly Conductive Ultrafine N-Doped Silicon Powders Prepared by High-Frequency Thermal Plasma and Their Application as Anodes for Lithium-Ion Batteries

Yuanjiang Dong,
Chang Liu,
Fei Li
et al.

Abstract: Silicon materials are widely regarded as highly promising candidate anodes for the next generation of lithium-ion batteries. However, the violent volume expansion and low intrinsic conductivity hinder their practical application. In this study, ultrafine N-doped silicon powders (N-doped Si) were prepared by using high-frequency thermal plasma (HF-plasma) technology, in which nanocrystallization and N doping were conducted in a single step without the formation of the Si 3 N 4 phase. Through characterization of… Show more

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Cited by 4 publications
(2 citation statements)
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“…Commonly used anode materials include chromium, gold, nickel, palladium, and titanium platinum-coated electrodes, as well as indium tin oxide-coated glass plates. Additionally, semiconductor materials such as n-doped silicon [ 22 ], cadmium sulfide [ 23 ] and semi-metallic graphite [ 24 ] are employed for the electrochemical growth of CPs films. This synthetic approach enables the preparation of independent, homogeneous, self-doped thin films while also allowing for copolymerization and grafting reactions to occur if desired.…”
Section: Introductionmentioning
confidence: 99%
“…Commonly used anode materials include chromium, gold, nickel, palladium, and titanium platinum-coated electrodes, as well as indium tin oxide-coated glass plates. Additionally, semiconductor materials such as n-doped silicon [ 22 ], cadmium sulfide [ 23 ] and semi-metallic graphite [ 24 ] are employed for the electrochemical growth of CPs films. This synthetic approach enables the preparation of independent, homogeneous, self-doped thin films while also allowing for copolymerization and grafting reactions to occur if desired.…”
Section: Introductionmentioning
confidence: 99%
“…[11][12][13] Several approaches have been employed to address the aforementioned limitations. They include the synthesis of nanostructured Si materials (i.e., nanoparticles, nanowires, and nanorods) to relieve Si-generated stress, [14][15][16][17][18][19] Si coating using conductive materials to reduce the electrical resistivity of Si, 20,21 doping of Si with impurities (e.g., phosphorus and boron) to improve its electrical conductivity and alter its phase transition behavior, [22][23][24][25][26][27] and prelithiation of Si to enhance the initial CE. [28][29][30] Furthermore, we proposed futuristic Si-based active materials, e.g., binary silicide/Si composites, to address the limitations of Si.…”
mentioning
confidence: 99%