by ultrathin intrinsic hydrogenated amorphous Si (a-Si:H) layers thus enabling open-circuit voltages as high as 750 mV. [ 2 ] The Ohmic losses between doped a-Si:H layers and metallic electrodes of the SHJ device are minimized by inserting a TCO layer in between. These TCO layers provide additional functionalities of antirefl ection in front of the cell [ 3 ] and the possibility of infrared (IR) light management in the cell rear-contact. [7][8][9] Optical absorption in the IR induced by free carriers in TCOs can signifi cantly deteriorate the generated photocurrent of the PV device. [ 10 ] These losses can be minimized by making the TCO more transparent often by reducing oxygen vacancies. However, this approach results in an increase of TCO refractive index, which is undesirable when the TCO is located at the rear of the device and covered by a metal layer. In such a case, the high refractive index of the TCO yields more efficient coupling to the surface plasmon polariton (SPP) modes of the metallic rear-contact, resulting in parasitic optical absorption losses. [7][8][9] Therefore, strategies that simultaneously reduce the refractive index and the IR absorption loss of TCOs are appealing in IR light management of c-Si solar cells, as well as in all devices incorporating a TCO/metal stack.In this article, we propose the addition of SiO 2 to ZnO:Al as a strategy to synthesize highly transparent TCOs with a low refractive index. We evaluate the performance of these TCOs for IR light management in SHJ solar cells to minimize optical absorption losses in the TCO and the metallic rear-contact. We should mention that Si doping of ZnO-based TCOs has been studied in the context of thin fi lm transistors (TFT) to either stabilize the TFT [ 11,12 ] or to improve the conductivity of the TCO. [ 13 ] Such studies have been primarily focused on a few percent concentrations of Si in ZnO where Si functions as an impurity doping. Our work addresses the refractive index tuning of ZnO:Al by SiO 2 addition in a range of concentrations wide enough to observe both electronic and structural modifi cations of ZnO:Al layers by addition of SiO 2 . We synthesize ZnO:Al with different concentration of SiO 2 up to 52 mol% SiO 2 in a cosputtering process. We analyze the chemical and structural properties of the obtained compounds and classify whether SiO 2 affects the electronic or structural properties of the ZnO:Al Highly transparent electrodes with a well-tuned refractive index are essential for a wide range of optoelectronic devices, such as light emitting diodes and solar cells. Here, it is shown that the transparency of ZnO:Al can be improved and its refractive index can be reduced simultaneously by the addition of SiO 2 into the layer. It is found that for low SiO 2 concentrations, Si quenches oxygen vacancies and improves the layer transparency. At higher SiO 2 concentrations a highly transparent amorphous compound of Zn x Si y O:Al forms, with a refractive index that scales down with the relative Si/Zn ratio. These layers are tes...