Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC

Ciuk, Tymoteusz; Kaszub, Wawrzyniec; Kościewicz, Kinga; Dobrowolski, A.; Jagiełło, Joanna; Chamryga, Adrianna; Gaca, J.; Wójcik, M.; Czołak, D.; Stańczyk, B.; Przyborowska, Krystyna; Kozłowski, Roman; Kozubal, M.; Michałowski, Paweł Piotr; Szary, Maciej J.; Kamiński, P.

doi:10.1016/j.cap.2021.03.021

Cited by 7 publications

(4 citation statements)

References 42 publications

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“…Similar p-type doping in few-layer graphene was observed earlier in Ref. [ 45 ], which also reported hole mobility of 120 cm 2 ·V −1 ·s −1 . Nevertheless, the sample preserves high optical transparency upon transition onto quartz, as demonstrated by the UV-vis transmission measurements, highlighting the material’s potential for use as a transparent conductive layer ( Figure 6 ).…”

Section: Resultssupporting

confidence: 88%

Electrical and Structural Characterization of Few-Layer Graphene Sheets on Quartz

et al. 2022

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Despite the impressive performance and incredible promise for a variety of applications, the wide-scale commercialization of graphene is still behind its full potential. One of the main challenges is related to preserving graphene’s unique properties upon transfer onto practically desirable substrates. In this work, few-layer graphene sheets deposited via liquid-phase transfer from copper onto a quartz substrate have been studied using a suite of experimental techniques, including scanning electron microscopy (SEM), Raman spectroscopy, admittance spectroscopy, and four-point probe electrical measurements. SEM measurements suggest that the transfer of graphene from copper foil to quartz using the aqueous solution of ammonium persulfate was accompanied by unintentional etching of the entire surface of the quartz substrate and, as a result, the formation of microscopic facet structures covering the etched surface of the substrate. As revealed by Raman spectroscopy and the electrical measurements, the transfer process involving the etching of the copper foil in a 0.1 M solution of (NH4)2S2O8 resulted in its p-type doping. This was accompanied by the appearance of an electronic gap of 0.022 eV, as evidenced by the Arrhenius analysis. The observed increase in the conductance of the samples with temperature can be explained by thermally activated carrier transport, dominating the scattering processes.

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Section: Resultssupporting

confidence: 88%

Electrical and Structural Characterization of Few-Layer Graphene Sheets on Quartz

et al. 2022

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Section: Methodsmentioning

confidence: 99%

“…In this proposed model, p-type CdTe and n-type CdS were used as an absorber layer and window layer, respectively. An additional layer of highly doped graphene [35] was applied as a back surface field (BSF) layer next to the absorber layer on the substrate, as shown in Figure 1. The layers in this solar cell were organized according to the energy bandgap, in which the layer with a lower bandgap was placed on the bottom, while the layer with a higher bandgap was placed on the top surface [36].…”

Section: Solar Cell Structure and Bsf Layermentioning

confidence: 99%

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

KC¹,

Shah

Akhtar

et al. 2021

Molecules

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This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

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“…Carrier-doped 2D materials have been realized by several methods, [54][55][56][57] such as self-doping caused by intrinsic defects, 58 bulk doping induced by the substrate, 59 spontaneous polarization associated with the substrate, 60 and so on. 61 The doping value is up to 10 14 -10 15 e cm À2 in some experimental studies [54][55][56] or theoretical research, [62][63][64][65] and so the chosen doping values in this work are reasonable. Additionally, carrier doping methodologies 40,66 have been frequently employed to modulate the performance characteristics of 2D materials.…”

Section: Electronic and Magnetic Properties Of Carrier-doped Msi 2 Nmentioning

confidence: 99%

Carrier doping modulates the magnetoelectronic and magnetic anisotropic properties of two-dimensional MSi₂N₄ (M = Cr, Mn, Fe, and Co) monolayers

An,

Lv,

et al. 2024

Phys. Chem. Chem. Phys.

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Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC

Cited by 7 publications

References 42 publications

Electrical and Structural Characterization of Few-Layer Graphene Sheets on Quartz

Electrical and Structural Characterization of Few-Layer Graphene Sheets on Quartz

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Carrier doping modulates the magnetoelectronic and magnetic anisotropic properties of two-dimensional MSi₂N₄ (M = Cr, Mn, Fe, and Co) monolayers

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Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC

Cited by 7 publications

References 42 publications

Electrical and Structural Characterization of Few-Layer Graphene Sheets on Quartz

Electrical and Structural Characterization of Few-Layer Graphene Sheets on Quartz

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Carrier doping modulates the magnetoelectronic and magnetic anisotropic properties of two-dimensional MSi2N4 (M = Cr, Mn, Fe, and Co) monolayers

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Carrier doping modulates the magnetoelectronic and magnetic anisotropic properties of two-dimensional MSi₂N₄ (M = Cr, Mn, Fe, and Co) monolayers