Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

Garcés, F.A.; Budini, Nicolás; Schmidt, Javier Alejandro; Arce, R.

doi:10.1016/j.tsf.2015.09.053

Cited by 12 publications

(6 citation statements)

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“…This is a well-known phenomenon for Al-doped ZnO thin films, which occurs due to successive substitution of smaller Al 3+ ions (0.53 Å) with larger Zn 2+ ions (0.74 Å) in ZnO lattice. In addition, the values given here for the a and c parameters are in accordance with the values reported previously for USP-deposited and 1.25 at.% Al-doped ZnO thin films [58]. Accordingly, the magnitude of residual stress developed in this layer was calculated to be 0.67 GPa, which dictates formation of tensile stress.…”

Section: Structural Characterization Of Glass/fto/azo Thssupporting

confidence: 89%

Solution processed glass/fluorine-doped tin oxide/aluminum-doped zinc oxide double layer thin films for transparent heater and near-infrared reflecting applications

Tönbül

Can

Őztürk

et al. 2021

J Sol-Gel Sci Technol

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Double layer glass/fluorine-doped tin oxide (FTO)/aluminum-doped zinc oxide (AZO) multifunctional thin films were achieved via ultrasonic spray pyrolysis (USP) method without employing a post-deposition annealing. Transparent heater and near-infrared heat reflection behaviors were investigated. The samples were characterized in terms of their structural, morphological, optical, and electrical properties. The top AZO layer exhibited a polycrystalline structure without any preferred orientation. The double layer structure showed very high average transmittance (87%, 400-700 nm) in the visible and reflectance (55%, 2500 nm) in the near-infrared, regions. In addition, the sheet resistance and resistivity of the film were measured as 14.85 (Ω sq −1 ) and 1.78 × 10 −3 (Ω cm), respectively. The saturation temperature, response time, surface temperature uniformity, areal power density, and thermal resistance values were found to be 111 °C, 174 s, 11.42%, 0.299 W/cm 2 , and 282.8 °C cm 2 W −1 for a sample with an active area of 31.5 cm 2 and input voltage of 9 V. In addition, dryice cooled samples (−25 °C) showed impressive deicing performance depending on the input power. In case of 12 V, all ice was defrosted, and water droplets were evaporated within 2 min and 10 s. During this process, a heating rate of ⁓43 °C/min was achieved.

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Section: Structural Characterization Of Glass/fto/azo Thssupporting

confidence: 89%

Solution processed glass/fluorine-doped tin oxide/aluminum-doped zinc oxide double layer thin films for transparent heater and near-infrared reflecting applications

Tönbül

Can

Őztürk

et al. 2021

J Sol-Gel Sci Technol

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“…In previous works different synthetic routes have been used for NiO thin films deposition including electron beam deposition [15], DC reactive sputtering [16,17], thermal evaporation [18], Chemical Vapor Deposition [19], sol-gel technique [20], pulsed plasma deposition [21], and electrodeposition [22]. Among these, we will focus more particularly in this paper on the spray pyrolysis (SP) process, owing to its several advantages such as low cost of the apparatus, large area with high homogeneity, and easy control of structure of the deposited films [23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Effect of Precursor Concentration on Structural Optical and Electrical Properties of NiO Thin Films Prepared by Spray Pyrolysis

Barir

Benhaoua²,

Benhamida

et al. 2017

Journal of Nanomaterials

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Undoped nickel oxide (NiO) thin films were deposited on 500 ∘ C heated glass substrates using spray pyrolysis method at (0.015-0.1 M) range of precursor. The latter was obtained by decomposition of nickel nitrate hexahydrate in double distilled water. Effect of precursor concentration on structural, optical, and electrical properties of NiO thin films was investigated. X-ray diffraction (XRD) shows the formation of NiO under cubic structure with single diffraction peak along (111) plane at 2 = 37.24 ∘ . When precursor concentration reaches 0.1 M, an increment in NiO crystallite size over 37.04 nm was obtained indicating the product nano structure. SEM images reveal that beyond 0.04 M as precursor concentration the substrate becomes completely covered with NiO and thin films exhibit formation of nano agglomerations at the top of the sample surface. Ni-O bonds vibrations modes in the product of films were confirmed by FT-IR analysis. Transparency of the films ranged from 57 to 88% and band gap energy of the films decreases from 3.68 to 3.60 eV with increasing precursor concentration. Electrical properties of the elaborated NiO thin films were correlated to the precursor concentration.

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“…These findings are consistent with the electrical property measurements described above (Figure ). , …”

Section: Resultsmentioning

confidence: 99%

Organofunctional Silane Modification of Aluminum-Doped Zinc Oxide Surfaces as a Route to Stabilization

Matthews

Glasser

Sprawls

et al. 2017

ACS Appl. Mater. Interfaces

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Aluminum-doped zinc oxide (AZO) is a low-temperature processed transparent conductive oxide (TCO) made of earth abundant elements; its applications are currently limited by instability to heat, moisture, and acidic conditions. We demonstrate that the application of an organofunctional silane modifier mitigates AZO degradation and explore the interplay between performance and material composition and morphology. Specifically, we evaluate degradation of bare AZO and APTES (3-aminopropyltriethoxysilane)-modified AZO in response to damp heat (DH, 85 °C, 85% relative humidity) exposure over 1000 h and then demonstrate how surface modification impacts changes in electrical and optical properties and chemical composition in one of the most thorough studies to date. Hall measurements show that the resistivity of AZO increases due to a decrease in electron mobility, with no commensurate change in carrier concentration. APTES decelerates this electrical degradation, without affecting AZO optical properties. Percent transmission and yellowness index of an ensemble of bare and modified AZO are stable upon DH exposure, but haze increases slightly for a discrete sample of modified AZO. Atomic force microscopy (AFM) and optical profilometer (OP) measurements do not show evidence of pitting or delamination after 1000 h DH exposure but indicate a slight increase in surface roughness on both the nanometer and micrometer length scales. X-ray photoelectron spectroscopy data (XPS) reveal that the surface composition of bare and silanized AZO is stable over this time frame; oxygen vacancies, as measured by XPS, are also stable with DH exposure, which, together with transmission and Hall measurements, indicate stable carrier concentrations. However, after 1500 h of DH exposure, only bare AZO shows signs of catastrophic destruction. Comparison of the data presented herein to previous reports indicates that the initial AZO composition and microstructure dictate the degradation profile. This work demonstrates that surface modification slows the bulk degradation of AZO and provides insight into how the material can be more widely used as a transparent electrode in the next generation of optoelectronic devices.

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Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

Cited by 12 publications

References 50 publications

Solution processed glass/fluorine-doped tin oxide/aluminum-doped zinc oxide double layer thin films for transparent heater and near-infrared reflecting applications

Solution processed glass/fluorine-doped tin oxide/aluminum-doped zinc oxide double layer thin films for transparent heater and near-infrared reflecting applications

Effect of Precursor Concentration on Structural Optical and Electrical Properties of NiO Thin Films Prepared by Spray Pyrolysis

Organofunctional Silane Modification of Aluminum-Doped Zinc Oxide Surfaces as a Route to Stabilization

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