Highly efficient and short length Lanthanum co-doped Bi2O3-based EDF for extended L-band amplification

Sugimoto, Naoki; Ochiai, Katsuhiro; Ohara, Seiki; Hayashi, Hirokazu; Fukasawa, Yasuji; Hirose, Takeshi; Reyes, Manuel R.

doi:10.1364/oaa.2002.pd5

Cited by 12 publications

(10 citation statements)

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“…Although bismuth oxide glass has higher non-linear refractive index than other glasses [15], Bi-EDF has the advantage of needing just a few meters fiber for effective L-band amplification [19,20]. We also demonstrated very low non-linearity L-band amplifier with Bi-EDF.…”

Section: Extended L-band Amplificationmentioning

confidence: 81%

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Erbium doped fiber and highly non-linear fiber based on bismuth oxide glasses

Sugimoto¹

2008

Journal of Non-Crystalline Solids

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Section: Extended L-band Amplificationmentioning

confidence: 81%

“…Only 250-cm long Bi-EDF (3250 ppm of Er) exhibits broadband gain even in extend L-band region to 1620 nm and no increase in noise figure (NF) beyond 1610 nm wavelength [19] as shown in Fig. 1.…”

Section: Extended L-band Amplificationmentioning

confidence: 91%

Erbium doped fiber and highly non-linear fiber based on bismuth oxide glasses

Sugimoto¹

2008

Journal of Non-Crystalline Solids

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“…Although bismuth oxide glass has higher nonlinear refractive index than other glasses 10 , Bi-EDF has the advantage of needing just a few meters fiber for effective L-band amplification 8,9 . We also demonstrated very low nonlinearity L-band amplifier with Bi-EDF.…”

Section: Extended L-band Amplificationmentioning

confidence: 99%

Broadband and short pulse amplification using bismuth oxide based erbium doped fiber and planar waveguide

Sugimoto

2005

SPIE Proceedings

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Bismuth based erbium doped fiber and planar waveguide exhibit inherent features which cannot be realized with silica based fibers and waveguides. Extend L-band amplification, high gain C+L band amplification for coarse WDM and short pulse amplification without spectral broadening can be realized using bismuth oxide based EDF and 1-cm 2 -size Er doped spiral waveguide which shows >15 dB gain can be realized using bismuth oxide glass.

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“…Therefore, extending the amplification bandwidth of erbium is by far a preferred means of expanding the transmission capacity. Amplifications in both S-band (below 1525 nm) [1][2][3][4] and the extended L-band (beyond 1605 nm) [5][6][7][8][9][10] have been reported using erbium-doped fibers, with the extended L-band amplification showing potential commercial viability [9].…”

Section: Introductionmentioning

confidence: 99%

“…Although their gain bandwidth can in principle be extended by lengthening the erbium fiber, lowering the erbium inversion, and employing significantly more filtering to achieve gain equalization across the wider band, both noise figure (NF) and power conversion efficiency (PCE) degrade drastically as a result. Several new or modified erbium host materials have been used to mitigate signal excited state absorption, resulting in a higher gain over the longer wavelength range, such as tellurite [5,11], bismuth-oxide [6,7], antimony silicate [12], P-doped aluminosilicate [8,13], and phosphosilicate [9] fibers. Although tellurite and bismuth-oxide based EDFAs have wider bandwidths compared to that of demonstrated phosphosilicate (P-Si) EDFAs, P-Si EDFAs have been shown to exhibit lower noise figures (under 6 dB) when the gain bandwidth is extended to 1620 nm (see Table 1).…”

Section: Introductionmentioning

confidence: 99%

Erbium-doped phosphosilicate fiber amplifiers: a comparison of configurations for the optimization of noise figure and conversion efficiency

Bolen

2005

Photonic Applications in Devices and Communication Systems

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Extending the amplification bandwidth of erbium-doped fiber amplifiers (EDFAs) is one of the most cost-effective means of expanding the fiber transmission capacity. In conventional aluminosilicate EDFAs, gain drops sharply beyond 1605nm. Several new or modified erbium host materials have been used to extend the amplification band to beyond the conventional L-band, such as tellurite, bismuth-oxide, antimony silicate, P-doped aluminosilicate, and phosphosilicate EDFAs. Although tellurite and bismuth-oxide based EDFAs have wider bandwidths compared to that of demonstrated phosphosilicate (P-Si) EDFAs, P-Si EDFAs have been shown to provide better noise performance when the gain bandwidth is extended to 1620 nm. In addition, unlike tellurite or bismuth-oxide fibers, P-Si EDF does not exhibit increased nonlinearity or weakened reliability, compared to conventional aluminosilicate EDFs. Furthermore, phosphosilicate erbium fiber is compatible with other silica fibers and can be fusion spliced to the standard SMF silica fiber with high return loss and extremely low splice loss. These properties make the P-Si EDF a top contender for commercial extended L-band EDFAs.One key issue in the design of the extended L-band amplifiers is the optimization of power conversion efficiency while keeping the noise figure low. In this paper, we explore various amplifier configurations and compare their performances experimentally. We report high-power P-Si EDFAs with simultaneous improvement of PCE and NF by a combination of a single-pass low-noise stage with one or two double-pass high-efficiency stages. The best configuration yields high power (22dBm), low NF (5.5dB maximum over 1570-1620 nm band), and high efficiency (27% overall PCE after gain flattening).

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Highly efficient and short length Lanthanum co-doped Bi2O3-based EDF for extended L-band amplification

Cited by 12 publications

References 1 publication

Erbium doped fiber and highly non-linear fiber based on bismuth oxide glasses

Erbium doped fiber and highly non-linear fiber based on bismuth oxide glasses

Broadband and short pulse amplification using bismuth oxide based erbium doped fiber and planar waveguide

Erbium-doped phosphosilicate fiber amplifiers: a comparison of configurations for the optimization of noise figure and conversion efficiency

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