Ni(OH) 2 nanosheet films were fabricated on Ti foils by a simple hydrothermal method and subsequently converted into NiS 2 via a vulcanized post-treatment at high temperature. The resultant NiS 2 nanosheet films were applied to quantum dot-sensitized solar cells (QDSSCs) as counter electrodes (CEs), showing great electrocatalytic activity with low charge-transfer resistance and high exchange current density in the reduction of the polysulfide electrolyte. An optimized power conversion efficiency up to 2.25% was achieved for the optimum NiS 2 -based QDSSC, suggesting an 51% enhancement in comparison with that of the QDSSC featuring the Pt CE (1.49% Quantum dot-sensitized solar cells (QDSSCs) have attracted great attention due to their low cost, easy fabrication, and high theoretical power conversion efficiency.1 Quantum dots (QDs) have attractive merits as the light absorber because of, for example, the sizedependence of the optical properties with strong light response, tunable band gaps, and the possibility to achieve high efficiency by generating multiple electron/hole pairs due to the impact-ionization effect in QDs.2 A typical QDSSC is assembled with a photoanode (e.g., TiO 2 ) sensitized with semiconductor QDs (e.g., CdS, CdSe or PbS), an electrolyte containing a redox couple (e.g., S 2− /S x 2− ), and a counter electrode (e.g., Pt, CoS and Cu 2 S).3 To improve the cell performance, significant effort has been devoted to optimizing all of the components in QDSSCs.4 So far, the highest power conversion efficiency (PCE) of QDSSCs is over 11%.
5The counter electrode (CE) is one of the indispensable components in QDSSCs, in which the electron transfer occurs to regenerate the oxidized species in the electrolyte and keep the circuit running.6 Pt was widely used as the CE material in the early QDSSCs after Gratzel et al. found that it had excellent electric catalytic reduction properties in the I 3 − /I − redox couple. 7 However, the catalytic reduction activity of Pt is poorly active in the S 2− /S x 2− redox couple in QDSSCs because sulfur atoms would be actively absorbed on Pt's surface to reduce its conductivity, consequently generating a considerable overpotential for the electrolyte reduction, and thereby resulting in the performance decrease of QDSSCs. 20 Among the various metal sulfides, NiS 2 , a typical p-type semiconductor, has also attracted much attention because of its novel electrical, optical, and magnetic properties for significant potential applications in many fields, 21,22 for example, dye-sensitized solar cells. 23 However, as compared to NiS, the application of NiS 2 films as CEs in QDSSCs is relatively rare. In addition, the direct growth of NiS 2 nanostructured films on metal foils has not been reported. The metal foil supported NiS 2 films may inherit some advantages from the metal substrates, such as the excellent conductivz E-mail: sunlan@xmu.edu.cn; mdye@xmu.edu.cn ity and flexibility for potential application in bendable electrochemical devices.In this regard, a vertical NiS 2 nanoshe...