2022
DOI: 10.3390/cryst12050651
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Highly Efficient Contact Doping for High-Performance Organic UV-Sensitive Phototransistors

Abstract: Organic ultraviolet (UV) phototransistors are promising for diverse applications. However, wide-bandgap organic semiconductors (OSCs) with intense UV absorption tend to exhibit large contact resistance (Rc) because of an energy-level mismatch with metal electrodes. Herein, we discovered that the molecular dopant of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) was more efficient than the transition metal oxide dopant of MoO3 in doping a wide-bandgap OSC, although the former showed smaller elect… Show more

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Cited by 6 publications
(3 citation statements)
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“…38,39 Thus, this OSC is a promising OSC to detect UV light. 40,41 Thin films of Ph-BTBT-10 and blends of this material with polystyrene (PS), poly(pentafluorostyrene) (PFS) and poly(methyl methacrylate) (PMMA) were deposited using the bar-assisted meniscus shearing (BAMS) technique on Si/SiO 2 substrates, employing the same deposition conditions as previously reported (see the Experimental section 10,13,42,43 ). The use of binding polymers typically gives rise to a vertical phase separation, where, commonly, the OSC crystallises on top of a layer of the binding polymer.…”
Section: Resultsmentioning
confidence: 99%
“…38,39 Thus, this OSC is a promising OSC to detect UV light. 40,41 Thin films of Ph-BTBT-10 and blends of this material with polystyrene (PS), poly(pentafluorostyrene) (PFS) and poly(methyl methacrylate) (PMMA) were deposited using the bar-assisted meniscus shearing (BAMS) technique on Si/SiO 2 substrates, employing the same deposition conditions as previously reported (see the Experimental section 10,13,42,43 ). The use of binding polymers typically gives rise to a vertical phase separation, where, commonly, the OSC crystallises on top of a layer of the binding polymer.…”
Section: Resultsmentioning
confidence: 99%
“…The capacitance of the double-layer dielectric layer was measured to be 7.35 nF cm −2 (figure S8, supplementary materials). The electrodes of the S and D were Ag, and a 2 nm thick F 4 -TCNQ layer was inserted into the interface between the C 8 -BTBT crystals and S/D electrodes, which could reduce the contact resistance [29,30]. The effective channel L and W are 50 and 50 µm, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Strategies for reducing R C in OFETs often focus on the minimization of R inter , including the interfacial treatment to decrease the injection barrier, and local chemical doping (such as MoO 3 and F 4 TCNQ) to facilitate carrier injection. , Regarding the minimization of R bulk , a straightforward approach is to reduce the thickness of the active layer . In particular, Chan et al utilized an organic crystalline monolayer and nondestructive contacts to realize a very small R C .…”
Section: Introductionmentioning
confidence: 99%