Highly efficient GaN vertical light emitting diode on metal alloy substrate from near UV to green color for solid state lighting application

Abstract

GaN vertical LED on metal alloy substrate (VLEDMS) has been successfully realized for wavelength spectrum from near UV to green color. Owing to the vertical structure and highly heat-conductive metal alloy substrate, VLEDMS exhibits an ultra high brightness and excellent reliability suitable for solid state lighting (SSL) application. A brightness of 80Lm/W using 450 nm chip mixed with yellow phosphor was achieved by optimization of LED structure epitaxy, chip process and packaging. Using 405 nm chip with polychromatic phosphor a 50 Lm/W white light with color rendering index better than 90 was obtained. We also can get very good uniform correlated color temperature from package with VLEDMS chip.

Temperature and thermal characteristics of InGaN/GaN vertical light-emitting diodes on electroplated copper

“…In contrast, the vertical LEDs (VLEDs), which enable the wafer bonding of the p-type GaN on substrates such as silicon, silicon carbides, metals, and metal alloys for removing the sapphire substrate, have many advantages of better current injection without current crowding, excellent thermal dissipation, high light extraction, and good reliability [8][9][10][11][12]. For VLEDs, a laser lift-off (LLO) process has been often used to remove the sapphire substrate from the GaN epitaxial layer.…”

The Research of LEDs with Metal Substrates

“…In recent years, LEDs with metal substrates have been researched by a number of groups [5][6][7][8] . LED chips are vertical structure.…”