Highly-efficient heterojunction solar cells based on two-dimensional tellurene and transition metal dichalcogenides

Wu, Kai; Ma, Huanhuan; Gao, Yunzhi; Hu, Wei; Yang, Jinlong

doi:10.1039/c9ta00280d

Cited by 107 publications

(83 citation statements)

References 73 publications

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“…MoSe 2 , WSe 2 , MoS 2 and WS 2 are documented as the most promising and widely studied TMD monolayers, emitting bright PL while remaining stable in air, at room temperature 6 . Such traits lend these materials to applications in optoelectronic devices 7 such as LEDs 3,8 , photovoltaic cells 9,10 , photodetectors 11 and single photo-emitters 12,13 . Their optical properties have attracted further attention due to the possibility for straightforward coupling to spin and valley degrees of freedom 14 .…”

Section: Introductionmentioning

confidence: 99%

Large area chemical vapour deposition grown transition metal dichalcogenide monolayers automatically characterized through photoluminescence imaging

et al. 2020

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Chemical vapour deposition (CVD) growth is capable of producing multiple single-crystal islands of atomically thin transition metal dichalcogenides (TMDs) over large areas. Subsequent merging of perfectly epitaxial domains can lead to single-crystal monolayer sheets, a step towards scalable production of high quality TMDs. For CVD growth to be effectively harnessed for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date, characterisation has been limited to sub-0.1-mm 2 areas, where the properties measured are not necessarily representative of an entire sample. Here, we apply photoluminescence (PL) imaging and computer vision techniques to create an automated analysis for large area samples of monolayer TMDs, measuring the properties of island size, density of islands, relative PL intensity and homogeneity, and orientation of triangular domains. The analysis is applied to ×20 magnification optical microscopy images that completely map samples of WSe 2 on hBN, 5.0 mm × 5.0 mm in size, and MoSe 2-WS 2 on SiO 2 /Si, 11.2 mm × 5.8 mm in size. Two prevailing orientations of epitaxial growth were observed in WSe 2 grown on hBN and four predominant orientations were observed in MoSe 2 , initially grown on c-plane sapphire. The proposed analysis will greatly reduce the time needed to study freshly synthesised material over large area substrates and provide feedback to optimise growth conditions, advancing techniques to produce high quality TMD monolayer sheets for commercial applications.

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Section: Introductionmentioning

confidence: 99%

Large area chemical vapour deposition grown transition metal dichalcogenide monolayers automatically characterized through photoluminescence imaging

et al. 2020

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“…The prediction reveals that 2D Te and TMDs form desirable type II band alignment with strong charge separation and enhanced sunlight absorption, which is suitable for fabrication of heterojunction solar cells. [ 107 ] The maximum power conversion efficiency of heterojunction solar cells can reach 22.5% for Te/WTe 2 heterostructure (Figure 7e), which is competitive over other reported 2D heterojunction solar cells. Qin et al.…”

Section: Device Applications Of Group‐vi Elemental 2d Materialsmentioning

confidence: 84%

Section: Device Applications Of Group‐vi Elemental 2d Materialsmentioning

confidence: 99%

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

Lin

Wang

Chai

2020

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to micrometers or wafer scale. With different compositions and crystal structures, these 2D materials differ from each other in properties, offering wide range of material choices for diverse functionalities, including electronics, optoelectronics, sensors, energy conversion, and storage. [14-21] As Si transistors approach their scaling limit, the loss of gate electrostatic control on the nanoscale channel and the direct source-to-drain tunneling increase the off-state leakage currents, raise power dissipation, and thus severely degrade the performance of Si transistors. [22-25] Because of this scaling limit of Si transistors, exploration of new channel materials is of vital importance for future nanoelectronics. Due to the ultrathin thickness and dangling-bond-free surface, the emerging 2D materials are promising candidates for continuously downward scaling. [26] The diversity of 2D materials provides broad choices of semimetals (e.g., graphene), insulators (e.g., h-BN), and semiconductors (e.g., TMDs, BP, Se, Te). [8-13] The 2D semiconductors with thickness-dependent bandgaps have been regarded as potential channel materials for replacing Si. [26] The layered nature of 2D semiconductors allows consistent thickness control with atomic precision down to the monolayer limit, leading to enhanced electrostatic control of the gate and further scaling of transistors. Also, the pristine surfaces of 2D semiconductors are free of dangling bonds even down to monolayer limit. The pristine surfaces can give rise to low density of interface trap states and consequently reduce the charge scattering. Taking TMDs as an example, molybdenum disulfide (MoS 2), one of the most widely studied 2D semiconductors is a potential replacement for Si. [27-29] Based on theoretical calculation, 2D MoS 2 is predicted to have a direct source-to-drain tunneling leakage current two orders of magnitude smaller than that of Si. [22] For monolayer MoS 2 , the leakage current will not limit the scaling of transistors down to 1 nm gate length, which is superior to Si with a sub-5 nm scaling limit. [22] With the unique layer nature, 2D semiconductors alleviate the severe short channel effect. Therefore, 2D semiconductors have been regarded as potential options for transistors with ultimate thin channel. After realizing advantages of 2D semiconductors over Si, numerous research studies focus on searching for 2D semiconductors with high carrier mobility and an appropriate bandgap and exploring their usage in future nanoelectronics. Due to the ultrathin thickness and dangling-bond-free surface, 2D materials have been regarded as promising candidates for future nanoelectronics. In recent years, group-VI elemental 2D materials have been rediscovered and found superior in electrical properties (e.g., high carrier mobility, high photoconductivity, and thermoelectric response). The outstanding semiconducting properties of group-VI elemental 2D materials enable device applications including high-performance field-effect transistors and optoelectronic devices. ...

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“…1,2,4-trimethylbenzen/1-phenylnaphthalen 11.7 [37] MoS 2 /p-Si 5.2 [38] g-SiC 2 nanotube/ZnO 12-20 [39] Phosphorene/MoS 2 17.5 [40] PCBM/CBN 10-20 [13] Bilayer phosphorene/MoS 2 16-18 [10] 2D MA 3 Bi 2 I 9 /3D MAPbI 3 18.97 [41] MoSe 2 /Ψ-phosphorene 20.26 [42] Te/MoTe 2 20.1 [43] Bilayer Ga 2 SeTe homojunction 19.0 This work…”

Section: Materials Pce [%] Referencesmentioning

confidence: 99%

Janus Ga₂SeTe: A Promising Candidate for Highly Efficient Solar Cells

et al. 2019

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The electronic and optical properties of Janus Ga2SeTe monolayer are calculated using first‐principles calculations and it is found that it has potential in solar cells. It is found that ultrathin cross‐plane pn‐junctions are obtained by stacking Ga2SeTe structures. The graphene‐Ga2SeTe‐graphene sandwich‐structured solar cells are configured to explore the device performance of Ga2SeTe solar cells. The photocurrent and the power conversion efficiency of the Janus Ga2SeTe solar cells are evaluated. The results show that multilayer Janus Ga2SeTe solar cells give rise to a photocurrent exceeding that of thin‐film silicon devices, indicating that Ga2SeTe is a potential material that could be used in photovoltaics devices.

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Highly-efficient heterojunction solar cells based on two-dimensional tellurene and transition metal dichalcogenides

Abstract: Tellurene and TMDs show desirable type II band alignment for constructing highly-efficient heterojunction solar cells with strong charge separation and enhanced sunlight absorption.

Cited by 107 publications

References 73 publications

Large area chemical vapour deposition grown transition metal dichalcogenide monolayers automatically characterized through photoluminescence imaging

Large area chemical vapour deposition grown transition metal dichalcogenide monolayers automatically characterized through photoluminescence imaging

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

Janus Ga₂SeTe: A Promising Candidate for Highly Efficient Solar Cells

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Highly-efficient heterojunction solar cells based on two-dimensional tellurene and transition metal dichalcogenides

Abstract: Tellurene and TMDs show desirable type II band alignment for constructing highly-efficient heterojunction solar cells with strong charge separation and enhanced sunlight absorption.

Cited by 107 publications

References 73 publications

Large area chemical vapour deposition grown transition metal dichalcogenide monolayers automatically characterized through photoluminescence imaging

Large area chemical vapour deposition grown transition metal dichalcogenide monolayers automatically characterized through photoluminescence imaging

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

Janus Ga2SeTe: A Promising Candidate for Highly Efficient Solar Cells

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Janus Ga₂SeTe: A Promising Candidate for Highly Efficient Solar Cells