Highly efficient near-infrared phosphor LaMgGa11O19:Cr3+

Liu, Shengqiang; Wang, Zhizhen; Cai, Hao; Song, Zhitang; Liu, Quanlin

doi:10.1039/d0qi00063a

Cited by 193 publications

(129 citation statements)

References 35 publications

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“…For practical applications, luminescence quantum efficiency is a critical parameter. Calculation detail for Luminescence quantum efficiency is shown in supporting information, and MASN:0.07Mn 2+ is provided with 70.1% internal quantum efficiency (IQE) excited at 310 nm as shown in Figure , which is comparable to that of some Cr 3+ doping matrixes 14‐17 . The absorption efficiency (Abs) is relatively low, and is determined to be 36.6%.…”

Section: Resultsmentioning

confidence: 93%

“…With Mn 2+ concentration increasing, a red spectroscopic shift of about 100 nm can be observed for the peak of 4 T 1g ( 4 G) → 6 A 1g ( 6 S) band in Figure 5C,D. Red‐shift can be explained by crystal field variation, reabsorption and energy transfer 15,42,43 . On account of unshifted excitation peak position and equivalent cation radius between Mg 2+ and Mn 2+ , the addition of Mn 2+ has little effect on crystal field strength.…”

Section: Resultsmentioning

confidence: 96%

“…Calculation detail for Luminescence quantum efficiency is shown in supporting information, and MASN:0.07Mn 2+ is provided with 70.1% internal quantum efficiency (IQE) excited at 310 nm as shown in Figure S4, which is comparable to that of some Cr 3+ doping matrixes. [14][15][16][17] The absorption efficiency (Abs) is relatively low, and is determined to be 36.6%. Upon 470 nm excitation, IQE and Abs are 47.1% and 19.8% respectively, much lower than those under 310 nm excitation.…”

Section: Luminescence Quantum Efficiencymentioning

confidence: 99%

“…Red-shift can be explained by crystal field variation, reabsorption and energy transfer. 15,42,43 On account of unshifted excitation peak position and equivalent cation radius between Mg 2+ and Mn 2+ , the addition of Mn 2+ has little effect on crystal field strength. Thus, concentration-dependence red-shift can be ascribed to the self-absorption and energy transfer.…”

Section: Pl and Ple Spectramentioning

confidence: 99%

“…Currently, numerous researchers have focused on Cr 3+ doping inorganic matrices, such as ScBO 3 , 6,13 Cs 2 AgInCl 6 , 14 LaMgGa 11 O 19 , 15 Ca 2 LuZr 2 Al 3 O 12 , 16 La 2 MgZrO 6 , 17 LiScP 2 O 7 , 18 LiInSi 2 O 6 , 19 NaScGe 2 O 6 , 20 etc, which can emit wavelength‐tunable NIR emission from ~700 to 1200 nm, originating from 4 T 2g → 4 A 1g transition with relatively weak crystal field. However, the luminescence quantum efficiency and thermal quenching resistance are expected to be improved for commercialization.…”

Section: Introductionmentioning

confidence: 99%

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Broadband deep‐red‐to‐near‐infrared emission from Mn²⁺ in strong crystal‐field of nitride MgAlSiN₃

et al. 2020

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Near-infrared (NIR) light source has received increasing attention for application in night-vision imaging, medical fields, the food processing industry, etc. 1-5 Especially, spectral region at 700-1100 nm shows excellent tissue penetration, which enables it advantageous for imaging blood vein distribution in vivo. 6,7 There is great commercial demand for optical devices and consumer electronics equipped with small-size, high efficiency and broadband emission NIR light source. The traditional NIR tungsten-halogen lamps suffer from poor efficiency, large size, short lifetimes and severe heat effect. 8 In contrast, NIR phosphor-converted light-emitting diodes (pc-LEDs) have attracted increasing interests considering the high luminescence efficiency, compact size, availability of simpler strategies for both material design and fabrication. 9-11 Since NIR pc-LEDs fabricated by sharp-line emission phosphors also fail to meet the requirement of commercial promotion due to narrow full width at half maximum (FWHM), 12 it is urgent to exploit NIR phosphors for designing novel solid-state NIR light source. Currently, numerous researchers have focused on Cr 3+ doping inorganic matrices, such as ScBO

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Section: Resultsmentioning

confidence: 93%

Section: Resultsmentioning

confidence: 96%

Section: Luminescence Quantum Efficiencymentioning

confidence: 99%

Section: Pl and Ple Spectramentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Broadband deep‐red‐to‐near‐infrared emission from Mn²⁺ in strong crystal‐field of nitride MgAlSiN₃

et al. 2020

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A General Ammonium Salt Assisted Synthesis Strategy for Cr³⁺‐Doped Hexafluorides with Highly Efficient Near Infrared Emissions

Song

Zhou

et al. 2021

Adv Funct Materials

156

111

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The discovery of highly efficient broadband near infrared (NIR) emission material is urgent and crucial for constructing NIR lighting sources and emerging applications. Herein, a series of NIR emission hexafluorides A2BMF6:Cr3+ (A = Na, K, Rb, Cs; B = Li, Na, K, Cs; M = Al, Ga, Sc, In) peaking at ≈733–801 nm with a full width at half maximum (FWHM) of ≈98–115 nm are synthesized by a general ammonium salt assisted synthesis strategy. Benefiting from the pre‐ammoniation of the trivalent metal sources, the Cr3+ can be more efficiently doped into the A2BMF6 and simultaneously prevent the generation of the competitive phase. Particularly, Na3ScF6:Cr3+ (λem = 774 nm, FWHM ≈ 108 nm) with optimal Cr3+‐doping concentration of 35.96% shows a high internal quantum efficiency of 91.5% and an external quantum efficiency of ≈40.82%. A lighting emitting diode (LED) device with a NIR output power of ≈291.05 mW at 100 mA driven current and high photoelectric conversion efficiency of 20.94% is fabricated. The general synthesis strategy opens up new avenues for the exploration of Cr3+‐doped high efficiency phosphors, and the as‐obtained record NIR output power demonstrates for NIR LED lighting sources applications.

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Spectral Regulation and Efficiency Optimization in Cr³⁺‐Doped Gadolinium Aluminum Gallium Garnet Near‐Infrared Ceramic Phosphors via Crystal‐Field Engineering

Jiang

Chen

et al. 2022

Adv Materials Technologies

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Among these practical applications, an efficient NIR light source with good stability, broadband emission character, and compact structure is their common demand. [4] However, as the miniaturization and function diversification become the development trends for these devices, the traditional NIR light sources, including tungsten halogen lamp and NIR light-emitting diode (NIR LED), are becoming more and more limited. Therefore, a new NIR light source with compact structure, high efficiency, and broadband emission characteristics has great practical need. [5] For the last few years, a new design of NIR light source-NIR phosphor-converted LEDs (NIR pc-LEDs) was put forward, [6] in which, phosphors were stimulated by the blue LED chip and emitted NIR light. Since the high-performance blue LED chips are available, it is the key issue to develop NIR fluorescence conversion materials with high efficiency, wide emission band, and good thermal stability. [7] The Cr 3+ -doped NIR phosphors have attracted considerable attention for mainly two reasons. First, Cr 3+ ions have strong absorption in the blue-light region, which makes it match well with commercial blue LED chips. [8] Second, their emission spectrum ranges from 650 to 1100 nm, which overlaps with NIR-I. At present, Cr 3+ ions show high optical-optical conversion efficiency and device performance in many material systems such as silicate, [9,10] phosphate, [11] aluminate, [10,12] and fluoride. [13] For example, Li et al. proposed CaLu 2 Mg 2 Si 3 O 12 :Cr 3+ on the basis of Ca 3 Sc 2 Si 3 O 12 :Cr 3+ , which had good thermal stability of 97.3% @ 150 °C and high external quantum efficiency (EQE, 20.7%). [14] Then, Yuan et al. prepared LiGaP 2 O 7 :Cr 3+ broadband NIR phosphor with the EQE improved to 28.3%, meanwhile, the electrooptical conversion efficiency of the device was up to 17%. [15] Recently, He et al. systematically investigated the luminescence performances of A 2 BMF 6 :Cr 3+ (A = Na, K, Rb, Cs; B = Li, Na, K, Cs; M = Al, Ga, Sc, In). A new EQE record as high as 40.82% was achieved, and the NIR light output power of the device was close to 700 mW. [16] All these results indicate that, Cr 3+ ions can be promising candidate to achieve efficient NIR light output. However, the electronic configuration of the Cr 3+ ion is [Ar]3d 3 , and the d-d optical transitions are significantly dependent onThe near-infrared (NIR) phosphor-converted light-emitting diode (pc-LED) is a new NIR light source with both compact structure and high efficiency, and its performances is greatly depended on the NIR phosphors. Herein, this work presents a Cr 3+ -doped gadolinium aluminum gallium garnet (GAGG:Cr 3+ ) NIR ceramic phosphor with a broadband emission in the range of 650-850 nm, and optical performances that can be regulated via crystal-field engineering. By optimizing the Al/Ga ratio, an external quantum efficiency as high as 65% is observed. The thermal stability is enhanced with the increase of Al content, which is attributed to the broadening of bandgap and the weak...

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Highly efficient near-infrared phosphor LaMgGa₁₁O₁₉:Cr³⁺

Abstract: LaMgGa11O19:Cr3+ phosphor was synthesized successfully, showing broadband NIR emission centered at ∼770 nm, high efficiency and excellent thermal quenching resistance for pc-LEDs.

Cited by 193 publications

References 35 publications

Broadband deep‐red‐to‐near‐infrared emission from Mn²⁺ in strong crystal‐field of nitride MgAlSiN₃

Broadband deep‐red‐to‐near‐infrared emission from Mn²⁺ in strong crystal‐field of nitride MgAlSiN₃

A General Ammonium Salt Assisted Synthesis Strategy for Cr³⁺‐Doped Hexafluorides with Highly Efficient Near Infrared Emissions

Spectral Regulation and Efficiency Optimization in Cr³⁺‐Doped Gadolinium Aluminum Gallium Garnet Near‐Infrared Ceramic Phosphors via Crystal‐Field Engineering

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Highly efficient near-infrared phosphor LaMgGa11O19:Cr3+

Abstract: LaMgGa11O19:Cr3+ phosphor was synthesized successfully, showing broadband NIR emission centered at ∼770 nm, high efficiency and excellent thermal quenching resistance for pc-LEDs.

Cited by 193 publications

References 35 publications

Broadband deep‐red‐to‐near‐infrared emission from Mn2+ in strong crystal‐field of nitride MgAlSiN3

Broadband deep‐red‐to‐near‐infrared emission from Mn2+ in strong crystal‐field of nitride MgAlSiN3

A General Ammonium Salt Assisted Synthesis Strategy for Cr3+‐Doped Hexafluorides with Highly Efficient Near Infrared Emissions

Spectral Regulation and Efficiency Optimization in Cr3+‐Doped Gadolinium Aluminum Gallium Garnet Near‐Infrared Ceramic Phosphors via Crystal‐Field Engineering

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Highly efficient near-infrared phosphor LaMgGa₁₁O₁₉:Cr³⁺

Broadband deep‐red‐to‐near‐infrared emission from Mn²⁺ in strong crystal‐field of nitride MgAlSiN₃

Broadband deep‐red‐to‐near‐infrared emission from Mn²⁺ in strong crystal‐field of nitride MgAlSiN₃

A General Ammonium Salt Assisted Synthesis Strategy for Cr³⁺‐Doped Hexafluorides with Highly Efficient Near Infrared Emissions

Spectral Regulation and Efficiency Optimization in Cr³⁺‐Doped Gadolinium Aluminum Gallium Garnet Near‐Infrared Ceramic Phosphors via Crystal‐Field Engineering