2010
DOI: 10.1080/15421406.2010.495912
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Highly Efficient Phosphorescent Green Organic Light-Emitting Diodes with High Energy Gap Host Materials

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Cited by 1 publication
(6 citation statements)
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“…The high performance of the SB-Si device shows that this material is significantly better at dispersing Ir(ppy) 3 than SB-C . The EQE obtained using SB-Si also agrees with data from previously published OLED devices using Ir-based emitters in the same SB-Si host [ 24 , 25 ].…”
Section: Resultssupporting
confidence: 86%
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“…The high performance of the SB-Si device shows that this material is significantly better at dispersing Ir(ppy) 3 than SB-C . The EQE obtained using SB-Si also agrees with data from previously published OLED devices using Ir-based emitters in the same SB-Si host [ 24 , 25 ].…”
Section: Resultssupporting
confidence: 86%
“…The HOMO levels were −6.2 and −6.3 eV for SB-C and SB-Si, respectively, whereas the LUMO levels were −1.3 eV for the SB-C and −1.5 eV for the SB-Si. The HOMO energies are similar to the value reported for SB-Si (−6.2 eV) obtained using photoemission yield spectroscopy [25]. Moreover, the oxidation potential observed for SB-Si (1.34 V) is close to values reported for a series of silicon-substituted dimethylfluorenyl compounds (E ox = 1.4 V) [16].…”
Section: Electrochemistrysupporting
confidence: 86%
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