In this study, a series of arene moieties were introduced on the side chains of a diketopyrrolopyrrole (DPP)based semiconducting polymer, including naphthalene (DPP-NA), anthracene (DPP-AN), and pyrene (DPP-PY) as an electrontrapping site for nonvolatile transistor-type memory. Therefore, the developed conjugated polymers integrate the channel and electret layers to concomitantly transport hole carriers and trap electrons. We found that the conjugations of arene moieties and their energylevel alignments to the conjugated polymer significantly influenced the memory performance. Accordingly, DPP-AN provided a good hole mobility (μ h ) of 0.020 cm 2 V −1 s −1 , a stable memory window (ΔV t ) of 70 V, and an ON/OFF-state current contrast (I ON /I OFF ) of 4 × 10 3 , exhibiting decent flash-type memory behaviors. To further enhance the memory−stretchability property of DPP-AN, DPPSi-AN with the octydodecyl side chain replaced by the carbosilane side chain exhibited a comparable μ h of 0.029 cm 2 V −1 s −1 , an enhanced ΔV t of 81 V, and an I ON /I OFF of 5 × 10 3 . Notably, DPPSi-AN could achieve a high μ h preservation of 53% and a stable ΔV t of 64 V at 60% tensile strain, alongside a μ h preservation of 69% and a slightly decreased ΔV t of 38 V after 600 cyclic stretch tests at 60% tensile strain. The improved memory− stretchability property of DPPSi-AN could be attributed to the favorable energy levels of anthracene that are conducive to electron trapping and ameliorating hole back-trapping. In addition, the anthracene-incorporated side chain reduced the crystallinity of the polymer and the carbosilane side chain rendered more free volume over the space. The side-chain-engineered conjugated polymer can be effectively modulated with different electron-trapping moieties, which also provides facile device fabrication procedures and superior memory performance.