Tm 3+ -doped media are actively researched due to the 2 µm laser transition 3 F 4 → 3 H 6 of Tm 3+ ion. A diode pumping of the 3 H 4 manifold has become a standard excitation method, utilizing the availability of 0.8 µm GaAlAs-based diodes and efficient cross-relaxation energy transfer. An essential drawback of this scheme results from a strong inter-ionic distance dependence of the cross-relaxation, which therefore requires sufficient Tm 3+ doping to achieve the desired quantum efficiency. This can in turn result in an increased probability of up-conversion losses, clustering of Tm 3+ ions, increased generated heat, more difficulties with material growth, and less favorable thermal properties. In this proceeding, we aim to bring attention to the resonant diode pumping of the 3 F 4 manifold in the 1.6-1.8 µm region and its feasibility. This excitation scheme has a low quantum defect, it circumvents the cross-relaxation requirements, and it is supported by broad absorption peaks. The commercial availability and output power of such diodes is already adequate for a solid-state laser pump source. To illustrate the feasibility, we summarize and expand our results with lasers based on Tm:YAG, Tm:YAP, Tm:YLF, Tm:GGAG and Tm, Ho:GGAG. Crystals were pumped using a 25 W fiber-coupled 1:1 focused diode laser (core diam. = 400 µm, waist diam. = 376 µm, NA = 0.22, M 2 = 52) emitting in the 1.68-1.71 µm region. Despite the relatively low spatial and spectral quality of the used 1.7 µm diode emission, favorable results were obtained, such as an efficiency of 80% with respect to absorbed power, multi-watt output power in CW regime, or efficient operation of low-concentration crystals.