Highly efficient transverse thermoelectric devices with Re₄Si₇ crystals

Abstract

The principal challenges in current thermoelectric power generation modules is the availability of stable, diffusion-resistant, lossless electrical and thermal metal-semiconductor contacts that do not degrade at the hot end nor...

Large Transverse and Longitudinal Magneto‐Thermoelectric Effect in Polycrystalline Nodal‐Line Semimetal Mg3Bi2

“…[ 22,42–44 ] Besides, the highest P xy of 2182 μW m −1 K −2 at 13.5K at 6 Tesla, obtained in the as‐fabricated polycrystalline Mg 3 Bi 2 , is higher than polycrystalline Ag 2 Se (≈ 35 μW m −1 K −2 at 300 K and 5 Tesla), polycrystalline Bi 77 Sb 23 (540 μW m −1 K −2 at 50 K and 5 Tesla), and comparable to single‐crystal Pb 0.77 Sn 0.23 Se (2100 μW m −1 K −2 at 300 K and 10 Tesla), single‐crystal Re 4 Si 7 (≈ 2100 μW m −1 K −2 at 550 K and 1.4 Tesla), and close to the value for polycrystalline NdP (3500 μW m −1 K −2 at 150 K and 9 Tesla). [ 22,24,44–46 ] Furthermore, at low‐temperature near 15 K, the MTE power factors of P xx and P xy are much higher than those of conventional thermoelectric materials (Figure S9, Supporting Information), demonstrating the advantages of MTE materials.…”

“…[22,[42][43][44] Besides, the highest P xy of 2182 μW m −1 K −2 at 13.5K at 6 Tesla, obtained in the as-fabricated polycrystalline Mg 3 Bi 2 , is higher than polycrystalline Ag 550 K and 1.4 Tesla), and close to the value for polycrystalline NdP (3500 μW m −1 K −2 at 150 K and 9 Tesla). [22,24,[44][45][46] Furthermore, at low-temperature near 15 K, the MTE power factors of P xx and P xy are much higher than those of conventional thermoelectric materials (Figure S9, Supporting Information), demon strating the advantages of MTE materials.…”

Geometrical Optimization and Transverse Thermoelectric Performances of Fe/Bi2Te2.7Se0.3 Artificially Tilted Multilayer Thermoelectric Devices

“…Transverse TE counterparts have been proposed as an alternative approach, whereby it can generate off-diagonal element I and Q [16,17]. The I and Q are perpendicular to one another; the electrical conductivity, thermal conductivity, and Seebeck coefficient are anisotropic.…”

Optimization of PbTiO3 Single Crystals with Flux and Laser Floating Zone Method

“…Works reporting using a floating zone furnace for PbTiO 3 had very fast growth speeds (100 mm/h) and were largely unsuccessful due to the evaporation of PbO leading to an unstable, collapsing zone . Recent progress in the use of laser diode floating zone (LDFZ) furnaces in synthesizing a wide variety of materials, − including those with high vapor pressures, − encourages revisitation of this technique as applied to PbTiO 3 . Here we report the growth of bulk crystals (4 cm length, ∼5 mm OD) of PbTiO 3 using the LDFZ.…”