2018
DOI: 10.1002/anie.201806452
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Highly Emissive Self‐Trapped Excitons in Fully Inorganic Zero‐Dimensional Tin Halides

Abstract: The spatial localization of charge carriers to promote the formation of bound excitons and concomitantly enhance radiative recombination has long been a goal for luminescent semiconductors. Zero‐dimensional materials structurally impose carrier localization and result in the formation of localized Frenkel excitons. Now the fully inorganic, perovskite‐derived zero‐dimensional SnII material Cs4SnBr6 is presented that exhibits room‐temperature broad‐band photoluminescence centered at 540 nm with a quantum yield (… Show more

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Cited by 281 publications
(318 citation statements)
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“…In the reflection spectrum, a strong absorption is located at about 328 nm, and the optical bandgap is calculated to be about 3.78 eV. [21][22][23] Similarly, we attribute the broadband luminescence of CsCu 2 I 3 to self-trapped excitons recombination, in whose mechanism the distortion of lattice is the main cause of Stokes shift. And in the excitation spectrum, the crystal has the highest excitation efficiency at about 347 nm, which is consistent with the reflection spectrum.…”
Section: Doi: 101002/adma201905079mentioning
confidence: 78%
See 1 more Smart Citation
“…In the reflection spectrum, a strong absorption is located at about 328 nm, and the optical bandgap is calculated to be about 3.78 eV. [21][22][23] Similarly, we attribute the broadband luminescence of CsCu 2 I 3 to self-trapped excitons recombination, in whose mechanism the distortion of lattice is the main cause of Stokes shift. And in the excitation spectrum, the crystal has the highest excitation efficiency at about 347 nm, which is consistent with the reflection spectrum.…”
Section: Doi: 101002/adma201905079mentioning
confidence: 78%
“…At about 425 nm, the crystal also has a significant absorption, which can be explained by exciton absorption. [2,21] In other words, large Stokes shift means strong lattice distortion. Figure 2b is the photoluminescence (PL) spectrum at 80 K. The PL spectrum has a wide full-width at half-maximum (FWHM, ≈75 nm) and the luminescence peak is located at 568 nm.…”
Section: Doi: 101002/adma201905079mentioning
confidence: 99%
“…[19] In view of the above discussion, ap robable reason for the broad emission and large Stokes shift of the 0D Cs 3 Cu 2 I 5 NCs is the STEs,asobserved in other 0D metal halide systems. [17,20] Evidence for STEs can be obtained using femtosecond transient absorption (TA) spectroscopy.F igure 4a presents the pseudocolor TA plot of the Cs 3 Cu 2 I 5 NCs as afunction of the wavelength and decay time.L aser excitation at l = 285 nm resulted in the TA spectra of Cs 3 Cu 2 I 5 NCs exhibiting ab road excited-state absorption plateau across the probe region (l = 400-700 nm), which is direct evidence for the formation of STEs. [21] Ther ise time of the photoinduced absorption (PIA) band probed at different wavelengths (l = 450, 550, and 650 nm) is within the resolution of the instrumental response (ca.…”
Section: Communicationsmentioning
confidence: 99%
“…For Cs4SnBr6 at RT, the tails of the two bands touch each other despite a large measured Stokes shift of 1.35 eV. [30] The measured Stokes shift in Cs4PbBr6 is only 0.69 eV, [28] which is too small to prevent the spectral overlap as temperature rises. This explains the highly emissive STE in Cs4SnBr6 [30] as opposed to the absence of STE emission in Cs4PbBr6 at RT.…”
Section: Resultsmentioning
confidence: 99%
“…This should be due to the strong exciton localization at Eu 2+ ions. More recently, Benin et al studied luminescent properties in Cs4SnX6 (X = Br, I), [30] which are isostructural to Cs4PbBr6. Although there is also thermal quenching in Cs4SnBr6, it is still highly emissive at RT with PLQE of 15 ± 5%.…”
Section: Introductionmentioning
confidence: 99%