2015
DOI: 10.1016/j.snb.2015.06.080
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Highly enhanced NO2 sensing performances of Cu-doped In2O3 hierarchical flowers

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Cited by 41 publications
(10 citation statements)
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“…Semiconductor metal oxide gas sensors are widely applied in volatile organic compounds (VOCs) detection because of their simplicity in operation, low cost, high sensitivity, and fast response speed. As an important semiconductor-sensing material, In 2 O 3 has been widely used in gas sensors because of its wide band gap, small resistivity, excellent optoelectronic properties, and high stability. Although various methods, such as element doping and morphology controlling, have already been used to enhance the gas-sensing properties, developing an effective strategy for improving the sensing performance of In 2 O 3 is attracting much attention.…”
Section: Introductionmentioning
confidence: 99%
“…Semiconductor metal oxide gas sensors are widely applied in volatile organic compounds (VOCs) detection because of their simplicity in operation, low cost, high sensitivity, and fast response speed. As an important semiconductor-sensing material, In 2 O 3 has been widely used in gas sensors because of its wide band gap, small resistivity, excellent optoelectronic properties, and high stability. Although various methods, such as element doping and morphology controlling, have already been used to enhance the gas-sensing properties, developing an effective strategy for improving the sensing performance of In 2 O 3 is attracting much attention.…”
Section: Introductionmentioning
confidence: 99%
“…form through the oxygen deficiencies, which are mainly for NO 2 chemisorption. Once the NO 2 chemisorption occurs, the bond is formed between the active sites and orbital of NO 2 and shares the electrons effectively [15,44]. Thus, the resistance of In 2 O 3 increases with respect to increasing adsorption of NO 2 .…”
Section: Gas Sensing Mechanismmentioning
confidence: 99%
“…It is an ideal gas sensing material, especially in the detection of NO 2 gas due to its higher affinity (2.28 eV) of NO 2 than pre-adsorbed oxygen (0.43 eV), high electrical conductivity, chemical stability and intrinsic defects [14]. In 2 O 3 is an n-type direct band gap semiconductor originated from the oxygen vacancies (abundance dynamic sites) present on its surface, which act as donor levels to provide free electrons to the conduction band of In 2 O 3 and hence, increases the adsorption of NO 2 [15][16][17]. So, various In 2 O 3 -based sensors have been explored for NO 2 gas sensing [18][19][20][21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…Unfortunately, the pure In 2 O 3 as sensing material possessing simply poor selectivity and a high response can hardly be obtained at low temperatures, which restricts its further application. To further enhance its sensing properties, In 2 O 3 has been modified by noble metals [36], metal ions [37], and carbon materials [38]. Composites of multi-phase semiconducting metal oxide nanostructures have also been frequently reported [39].…”
Section: Introductionmentioning
confidence: 99%