Vanadium pentoxide (V 2 O 5 ) thin lms were grown on porous silicon (PS) layer by electron beam evaporation technique under an oxygen partial pressure. The morphology of the porous surface before and after V 2 O 5 deposition for different evaporation times was observed by the Scanning Electron Microscope (SEM). The predicts changes of the chemical composition and bonds at the porous surface have been studied by FTIR and Raman spectroscopies. Photoluminescence (PL) spectroscopy was