Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure

Abstract

Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here. Improved reliability and robust switching properties of the multilayer Al2O3 memory devices are observed compared to those of the single‐layer devices, with the assistance of a guide filament formed in the bottom Al2O3 resistive layer. The multilayer Al2O3 resistive memory devices exhibit nonvolatile and bipolar resistive switching properties with high ON/OFF ratio (>104), DC sweep endurance cycles (>700), statistical uniformity, and retention times (2 × 104 s). The role of the guide filament in the multilayer structure is identified in the non‐rewritable properties of the bottom layer device, increased reset current values, and spatial temperature distribution simulation. Thus, the formation sites of the switchable filament in the top Al2O3 layer can be specified by the guide filament, resulting in remarkable improvement of reproducibility with more robust metallic percolation paths. The reliable resistive switching properties in flexible conditions is also evaluated in a bent radius of 10 mm, and the suggested flexible multilayer memory devices can provide promising strategies to be utilized in future practical storage media.

Flexible and Stretchable Memristive Arrays for in-Memory Computing

“…The most straightforward approach to obtain flexible memristive arrays is directly depositing inorganic materials onto flexible substrates via thin-film fabrication processes, such as evaporation and sputtering. Until now, a large number of inorganic materials, such as AlO x (Lee et al, 2017;Jang et al, 2018b), SiO x (Yoon et al, 2018), WO x (Lin et al, 2018), and HfAlO x (Wang et al, 2020d;Wang et al, 2021c), have been fabricated as flexible resistive switching dielectrics by using this approach. For instance, J. Yoon et al reported a 8 × 8 flexible SiO x -based one diode-one resistor (1D-1R) memristive crossbar array on a plastic substrate by employing physical vapor deposition (PVD) technology (Yoon et al, 2018).…”

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

“…As a matter of fact, in addition to utilizing binary‐oxides functional layer to fabricate resistive switching memory, there were a large amount of works reported novel assembly of diverse binary‐oxide with multilayer nanostructures for improving the performance of binary‐oxide based ReRAM devices . The majority of binary‐oxides were employed as the functional layers.…”

Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM

“…A RRAM cell generally is composed of a metal electrode/insulator/metal (MIM) electrode sandwiched structure [3]. Currently, binary metal oxides such as Al 2 O 3 [4][5][6], TiO 2 [7][8][9], HfO x [10], TaO x [11,12], MoO 3 [13], ZnO [14] or NiO [15] have been mainstreaming insulators for RRAM due to their simple structure, controlled composition and compatibility with complementary metal-oxide-semiconductor(CMOS) processes. However, the problems of binary metal oxide-based RRAMs are obvious, such as more sophisticated methods or using expensive equipment, balance of performance parameters of RRAMs which hinder the realization of their practical applications.…”