Highly linear low voltage GaAs pHEMT MMIC switches for multimode wireless handset applications

Abstract

A true 3V highly linear low loss single pole five throw (SP5T) switch for multimode wireless handset applications is presented. By using advanced Filtronic pHEMT technology with extremely low leakage current and low channel resistance it is possible to achieve very low harmonic levels at maximum GSM power levels four FETs in series and yet still achieve insertion losses of 0.5 dB at 900 MHz. Increasing the number of FETs also allows for 24 dB of isolation to be achieved at 900 MHz.(P,~~<-35dBm at Pl~C34.5 dBm) by Using

On the design of a high-performance digital radar system

“…A final LNA and pad adjust the signal power level to 4 dBm, which is sufficiently high for the final digitization stage. Note that the various receiver channels can be multiplexed using a highly linear single-throw-muliplethrow switch [11], [12] to reduce the number of I/Os needed with the digitizer.…”

Intergate-Channel-Connected Multi-gate PHEMT devices for antenna switch applications

“…A SPDT switch is designed to confirm the linearity of the IGCC-PHEMT by using a conventional 0.5-Jlm-gate InGaAs PHEMT process with a threshold voltage of -1.1 V. For input RF power of 30 dBm in a 50-ohm system, the voltage across the off-state path is as follows [7]. This voltage is shared between the gates to channel junctions of off-state FETs.…”