Highly localized strain fields due to planar defects in epitaxial SrBi2Nb2O9 thin films

Boulle, Alexandre; Guinebretière, René; Dauger, A.

doi:10.1063/1.1870119

Cited by 28 publications

(23 citation statements)

References 46 publications

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“…2͑d͒. Very similar observations have been reported for ErAs/ GaAs͑001͒, 7 AlN/sapphire, 8 GaN/sapphire, 9 ZnO/sapphire, 10 SrBi 2 Nb 2 O 9 / SrTiO 3 ͑SBN͒, 11 and Nb/ Al 2 O 3 . 12 Such diffraction patterns can be explained by a long-range as well as a short-range order in the epitaxial systems.…”

Section: A ⌰ /2⌰-scans At the "0002… Bragg Reflectionsupporting

confidence: 84%

“…12 Such diffraction patterns can be explained by a long-range as well as a short-range order in the epitaxial systems. 7,11,13 The origin of the diffuse scattering can be either due to the angular spreading of the c-axis ͑tilt͒ or small crystallite diameters and spatial correlations in dislocation networks, i.e., a short in-plane correlation length parallel to the substrate, or both. In the symmetric geometry considered here, in the case of correlation lengths being responsible, the angular width of the diffuse scattering should narrow with higher order reflections because of the higher q-vector transform.…”

Section: A ⌰ /2⌰-scans At the "0002… Bragg Reflectionmentioning

confidence: 99%

“…For diffraction the origin of the sharp peak ͑correlation peak͒ can be attributed to the dislocation networks, which are seen by the x rays as a long-range ordered correlated system. 11,13 In our case the planes of disturbance, due to the inhomogeneous strain fields of the defects, must be parallel to the substrate because the streak is running strictly in the c-axis direction. As has been pointed out in Ref.…”

Section: A ⌰ /2⌰-scans At the "0002… Bragg Reflectionmentioning

confidence: 99%

See 2 more Smart Citations

Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

Bläsing

Krost

Hertkorn

et al. 2009

Journal of Applied Physics

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This paper presents an x-ray study of GaN, which is grown on nominally undoped and oxygen-doped AlN nucleation layers on sapphire substrates by metal organic vapor phase epitaxy. Without additional oxygen doping a trimodal nucleation distribution of AlN is observed leading to inhomogeneous in-plane strain fields, whereas in oxygen-doped layers a homogeneous distribution of nucleation centers is observed. In both types of nucleation layers extremely sharp correlation peaks occur in transverse -scans which are attributed to a high density of edge-type dislocations having an in-plane Burgers vector. The correlation peaks are still visible in the ͑0002͒ -scans of 500 nm GaN which might mislead an observer to conclude incorrectly that there exists an extremely high structural quality. For the undoped nucleation layers depth-sensitive measurements in grazing incidence geometry reveal a strong thickness dependence of the lattice parameter a, whereas no such dependence is observed for doped samples. For oxygen-doped nucleation layers, in cross-sectional transmission electron microscopy images a high density of stacking faults parallel to the substrate surface is found in contrast to undoped nucleation layers where a high density of threading dislocations is visible. GaN of 2.5 m grown on top of 25 nm AlN nucleation layers with an additional in situ SiN mask show full widths at half maximum of 160Љ and 190Љ in ͑0002͒ and ͑10-10͒ high-resolution x-ray diffraction -scans, respectively.

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Section: A ⌰ /2⌰-scans At the "0002… Bragg Reflectionsupporting

confidence: 84%

Section: A ⌰ /2⌰-scans At the "0002… Bragg Reflectionmentioning

confidence: 99%

Section: A ⌰ /2⌰-scans At the "0002… Bragg Reflectionmentioning

confidence: 99%

See 1 more Smart Citation

Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

Bläsing

Krost

Hertkorn

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The second component has a low intensity, <10 −2 in Fig. 2, and is due to the diffuse scattering on distorted regions having a limited spatial extension [24,25]. It may be noticed that while the two curves show similar high-intensity components, in the low-intensity range, the nanocomposite film exhibits a wider diffuse scattering component.…”

Section: Structural Characterizationmentioning

confidence: 87%

The Vortex Path Model Analysis of the Field Angle Dependence of the Critical Current Density in Nanocomposite YBa2Cu3 O 7−x – BaZrO3 Films Obtained by Low Fluorine Chemical Solution Deposition

Mos

Nasui

Gabor

et al. 2014

J Supercond Nov Magn

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In the present paper, we analyze the role of in situ grown BaZrO3 (BZO) inclusions in YBa2Cu3O7−x (YBCO) thin films prepared by chemical solution deposition using a low fluorine coating solution, on the field angle dependence of the critical current density, Jc(), data using the vortex path model. In order to form a coherent picture on the BZO doping influence on the pinning properties of the YBCO matrix, detailed structural analyses performed by X-ray diffraction techniques and microstructural evaluation by transmission electron microscopy are also presented. The evaluation of different contributions to the overall, Jc, permitted us to prove the effectiveness of the BZO inclusions acting as isotropic pinning centers, reflected in a uniform component of high relative value with respect to other components. For the studied 10 mol % BZO doping concentration, a threefold increase in the critical current density, Jc, of the YBCO host is measured, in self-field at 77 K, corresponding to a value of Jc=2.9MA/cm2, whereas a factor 10 is measured at 1 T (Jc=0.35 MA/cm2). © 2014, Springer Science+Business Media New York

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“…The variation of epitaxial strain across the thickness of the film is not uniform, and in general it is pronounced close to the thin film substrate interface and relaxes on moving towards the free surface. 20,48 Thus the formation of defects causes a variation of strain field inside the films. This will results in the local variation of T MI inside the films and it will broaden the metal to insulator transition of the films.…”

Section: Discussionmentioning

confidence: 99%

Heterogeneous nucleation and metal-insulator transition in epitaxial films of NdNiO3

Kumar

Rajeev

Kushwaha

et al. 2010

Journal of Applied Physics

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We have investigated the temperature driven first order metal-insulator transition in thin films of NdNiO3 and have compared it with the bulk behavior. The M-I transition of thin films is sensitive to epitaxial strain and a partial relaxation of epitaxial strain creates an inhomogeneous strain field in the films which broadens the M-I transition. Both the thin film and the bulk samples exhibit non equilibrium features in the transition regime which are attributed to the presence of high temperature metallic phases in their supercooled state. The degree of supercooling in the thin films is found to be much smaller than in the bulk which suggests that the metal insulator transition in the thin film occurs through heterogeneous nucleation.

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Highly localized strain fields due to planar defects in epitaxial SrBi2Nb2O9 thin films

Cited by 28 publications

References 46 publications

Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

The Vortex Path Model Analysis of the Field Angle Dependence of the Critical Current Density in Nanocomposite YBa2Cu3 O 7−x – BaZrO3 Films Obtained by Low Fluorine Chemical Solution Deposition

Heterogeneous nucleation and metal-insulator transition in epitaxial films of NdNiO3

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