Highly luminescent blue-emitting CdZnS/ZnS nanorods having electric-field-induced fluorescence switching properties

Lee, Yonghee; Kim, Somang; Kim, Hyo Seok; Shin, Jeong Bin; Choi, Wonseok; Cho, Hyunjin; Kim, Kyungmok; Lee, Taeyang; Kim, Jinwuk; Kang, In‐Byeong; Choi, Kyung Cheol; Kim, Yong‐Hoon; Jeon, Duk Young

doi:10.1039/c6tc04602a

Cited by 14 publications

(12 citation statements)

References 44 publications

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“…6). Wurtzite CdS usually grows along the [001] direction (c-axis) [1]; the c-axis is energetically preferred for the growth/relaxation of the wurtzite lattice [59]. At mol% of Zn greater than 12%, the lattice contraction becomes uncorrelated [1].…”

Section: Resultsmentioning

confidence: 99%

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

2017

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Thin films of Cd 1-x Zn x S (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato [Cd(C 2 H 5 OCS 2 ) 2 ] and zinc ethylxanthato [Zn(C 2 H 5 OCS 2 ) 2 ] in x ratios of 0-0.15 and of 1. A solution of the precursor(s) in THF was spin coated onto a glass substrate and then heated at 250°C for 1 h under N 2 . The thickness of the film formed can be controlled by varying the solution composition and/or the spin rate of the coating. A total metal precursor solution concentration of 50 mM was used in all cases. The films were characterized by p-XRD, SEM, EDX, ICP-AES, XPS, UV-Vis absorption spectroscopy, Raman spectroscopy and resistivity measurements. The band gaps of the films were between 2.35-2.58 and 3.75 eV (0 B x B 0.15 and at x = 1). The resistivity of Cd 1-x Zn x S films was found to vary linearly with zinc contents, and the properties of the films suggest potential application to photovoltaics as window layers. This work is the first study to demonstrate Cd 1-x Zn x S thin films by a spin coating/melt method from xanthato precursors.

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Section: Resultsmentioning

confidence: 99%

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

2017

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“…[ 39 ] Sequential Cd to Cu to Zn ion exchange for the CdSe/CdS core/shell QRs results in a small hypsochromic shift of ≈7 nm at the cost of two times lower PLQY, finally, giving red (611 nm) emitting CdSe@CdS/ZnS QRs. [ 40,41 ] In another work, [ 42 ] the preparation of blue‐emitting QRs of general composition CdZnS (without Se) was described limiting PL wavelength only to blue (<475 nm) wavelength region.…”

Section: Introductionmentioning

confidence: 99%

Thermally Stable Quantum Rods, Covering Full Visible Range for Display and Lighting Application

Prodanov

Gupta

Kang

et al. 2020

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Recently, quantum rods (QRs) have been studied heavily for display and lighting applications. QRs offer serious advantages over the quantum dots such as higher light out‐coupling coefficient, and polarized emission. The QR enhancement films double liquid crystal display efficiency. However, it is still a challenge to synthesize good quality green (λem ≈ 520 nm) and blue (λem ≈ 465 nm) emitting QRs, due to very large bathochromic shift during the shell growth. Furthermore, until now, the presence of cadmium in high‐quality QRs is inevitable, but due to its toxicity, RoHS has restricted the amount of cadmium in consumer products. In this article, low Cd core‐shell QRs, with a narrow‐band luminescence spectrum tuned in the whole visible range, are prepared by replacing Cd with Zn in a one‐pot post‐synthetic development. These QRs possess the good thermal stability of photoluminescence properties, and therefore, show high performance for the on‐chip LED configuration. The designed white LEDs (WLEDs) are characterized by a high brightness of 120000 nits, and color gamut covering 122% NTSC (90% of BT2020), in the 1931CIE color space. Additionally, these LEDs show a high luminous efficiency of 115 lm W−1. Thus, these quantum rod LED are perfectly viable for display backlighting and lighting applications.

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“…As our desired product would exhibit short internanocrystal distances in a film while the Ge NCs remain passivated, we decided to attempt the ligand replacement with S in ODE. This S in ODE solution has proved successful as a sulfur source for metal-sulfide nanocrystal synthesis − and could potentially serve as a route to passivated metal nanocrystals. Since the size of a single S atom is much smaller than a thiol molecule, but presumably will interact with the Ge in a similar fashion, if successful the S would be expected to support shorter internanocrystal distances.…”

Section: Resultsmentioning

confidence: 99%

“…Sulfur has been employed as one such inorganic ligand which exhibits a strong passivating effect with Ge and in the past has been deposited via the thermolysis of a dithiocarbamate or thiol . Alternatively, elemental S dissolved in long-chain organic alkene solvents has been employed as a S source in the formation of metal sulfide nanocrystals. − Though the mechanism of exchange ,, is admittedly not fully understood, organosulfur compounds are formed upon heating sulfur in the presence of 1-octadecene . Though some control over the identity of the organosulfur species is afforded by controlling the duration of heating, a complex mixture often persists .…”

Section: Introductionmentioning

confidence: 99%

Sulfur-Capped Germanium Nanocrystals: Facile Inorganic Ligand Exchange

et al. 2017

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The development of applications for germanium nanocrystals has been hindered by the limited availability of synthetic methods coupled with poorly understood ligand-exchange chemistry. Herein we describe the synthesis of germanium nanocrystals and ligand exchange experiments designed to establish facile routes toward ligand replacement and, consequently, layers that are amenable to charge-transfer. After assessing thiols, carboxylates, and dithiocarbamates, sulfur dissolved in 1-ocatadecene was determined to be the most amenable to ligand exchange, with over 95% of the initial alkylamine ligand replaced as determined by Fourier transform infrared spectroscopy (FTIR). These results were in good agreement with density functional theory calculations showing a strong preference for Ge–S bonding. The materials were fully characterized via powder X-ray diffraction, FTIR, transmission electron microscopy, and X-ray and UV photoelectron spectroscopy. This new ligand exchange procedure provides a possible route toward the fabrication of thin films that may be employed in such applications as photovoltaic devices.

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Highly luminescent blue-emitting CdZnS/ZnS nanorods having electric-field-induced fluorescence switching properties

Abstract: Highly luminescent blue-emitting CdZnS/ZnS nanorods were demonstrated. A study on the electric field-induced fluorescence switching property was presented.

Cited by 14 publications

References 44 publications

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

Thermally Stable Quantum Rods, Covering Full Visible Range for Display and Lighting Application

Sulfur-Capped Germanium Nanocrystals: Facile Inorganic Ligand Exchange

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