Highly luminescent red-emitting In(Zn)P quantum dots using zinc oxo cluster: synthesis and application to light-emitting diodes

Choi, Yong-Sung; Kim, Do-Hoon; Shin, Yun Seop; Lee, Woojin; Orr, Seungjin; Kim, Jin Young; Park, Jong Hyun

doi:10.1039/d1nr08038e

Cited by 9 publications

(11 citation statements)

References 38 publications

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Section: Challenges For Blue‐emitting Inp Qdssupporting

confidence: 59%

“…It is demonstrated that the FWHM of final emission spectrum decreases from 56 to 37 nm, in the meanwhile the emission peak blue shifts more than 10 nm which is attributed to the smaller size (Figure 3d). [52] Similarly, it is also observed in the investigation reported by Koh et al and they proposed the effect of Zn-P complex on size tuning through regulating reactivity of [P] with [In]. [29] Therefore, it is crucial to slow down the reaction rate of P(TMS) 3 for avoiding the rapid formation and consumption of monomers thus causing hard preparation of small-size InP QDs.…”

Section: Growth Kineticsmentioning

confidence: 73%

“…The addition of Zn precursor plays a significant role in improvement of PLQY, decrease of FWHM and blueshift of emission especially. [ 29,42,52,63,81,84,113,114 ] However, there is a debate if the Zn 2+ ions penetrate into InP core to form ZnP bonds or locate on the surface. Xu et al.…”

Section: Strategies For Blue‐emitting Inp Qdsmentioning

confidence: 99%

“…[51] Thanks to the preference for deposition and the separation of nucleation and growth, uniform, and desired InP QDs have been obtained through controlling the injection rate and volume (Figure 2c). [15,30,52] Actually, it is similar to the successive ion layer adsorption and reaction (SILAR) for the heteroepitaxial growth of shell layer. By this way, high-quality green and red emitting InP QDs with narrow emission have been obtained [30,52] but it is unsuitable for preparation of small QDs.…”

Section: Seed-growthmentioning

confidence: 99%

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Advances, Challenges, and Perspectives for Heavy‐Metal‐Free Blue‐Emitting Indium Phosphide Quantum Dot Light‐Emitting Diodes

Cui

Yang

Qin

et al. 2022

Advanced Optical Materials

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on display. As a significant media for showing various information, it is expected that the next-generation display is able to provide excellent vision experience, and be light and even energy-efficient. Over the past few decades, quantum dot light-emitting diodes (QLEDs) have attracted much attention owing to their promising application in next-generation display. [1][2][3][4][5] In comparison with commercialized organic LEDs (OLEDs), the emitting layer of QLEDs, inorganic colloidal quantum dots (QDs) have advantages of tunable emission, narrow line width, high quantum yield (QY), and inorganic nature, which offer QLEDs wide color gamut, high color purity and luminance, solution-processability, and potentially high stability. [6] Nowadays, cadmium-based (Cd-based) QDs and their corresponding QLEDs have obtained much progress through many studies from materials to devices. The external quantum efficiencies (EQEs) of red, green, and blue emissive QLEDs have been improved to 30.9%, [7] 28.7%, [8] and 21.9%, [8] respectively. Moreover, they show high luminance, long lifetime, and high color purity. The excellent performance makes them potential alternatives to OLEDs in display. However, as a heavy metal element, Cd presents severe toxicity and environmental issues,dot light-emitting diodes (QLEDs), regarded as promising candidates in the next-generation display, have attracted much attention recently. In spite of the outstanding performance of cadmium-based (Cd-based) QLEDs, the toxicity of Cd hinders their wide application. Indium phosphide quantum dots (InP QDs) with heavy-metal-free feature and competitive performance are considered to be able to replace Cd-based QDs as emitting layer in the QLEDs. Much progress is obtained in the red-emitting and green-emitting InP-based QLEDs. However, the blue-emitting ones are faced with great challenges and are demanded on full-color display urgently, which is limited by the inferior performance of blue-emitting InP QDs and lack of investigations about their QLED devices. In this review, the encountered challenges for high-quality blue-emitting InP QDs are presented. Common strategies for blue-emitting InP QDs, including size engineering, composition engineering, and surface engineering are presented and analyzed. The progress of blue-emitting InP-based QLEDs, which strongly relies on the advances of materials, is also summarized. Finally, some perspectives from device physics are provided and discussed to inspire more efficient strategies toward blueemitting InP-based QLEDs.

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Section: Challenges For Blue‐emitting Inp Qdssupporting

confidence: 59%

Section: Growth Kineticsmentioning

confidence: 73%

Section: Strategies For Blue‐emitting Inp Qdsmentioning

confidence: 99%

Section: Seed-growthmentioning

confidence: 99%

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Advances, Challenges, and Perspectives for Heavy‐Metal‐Free Blue‐Emitting Indium Phosphide Quantum Dot Light‐Emitting Diodes

Cui

Yang

Qin

et al. 2022

Advanced Optical Materials

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show abstract

“…Another way to prevent surface oxidation of CQDs is adding additional surface ligands for conformal surface passivate. For InP CQDs, it was reported that zinc complexes form In(Zn)P outer layer that protects the InP core from oxidation even after the washing and redispersion process [ 27 , 28 ]. However, the quantitative analyses on function of zinc complexes in InP CQDs are not fully explores yet.…”

Section: Introductionmentioning

confidence: 99%

Zinc Carboxylate Surface Passivation for Enhanced Optical Properties of In(Zn)P Colloidal Quantum Dots

Yoo

Bak

et al. 2022

Micromachines

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Indium phosphide (InP) colloidal quantum dots (CQDs) have generated great interest as next-generation light-emitting materials owing to their narrow emission spectra and environment-friendly components. The minimized surface defects is essential to achieve narrow full-width at half-maximum (FWHM) and high photoluminescence quantum yield (PLQY). However, InP CQDs are readily oxidized in ambient condition, which results in formation of oxidation defect states on the surface of InP CQDs. Herein, we introduce a strategy to successfully passivate the surface defects of InP core by zinc complexes. The zinc carboxylates passivation reduces FWHM of InP CQDs from 130 nm to 70 nm and increases PLQY from 1% to 14% without shelling. Furthermore, the photoluminescence (PL) peak has shifted from 670 nm to 510 nm with an increase of zinc carboxylates passivation, which suggests that excessive zinc carboxylates functions as a size-regulating reagent in the synthesis.

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Recent Developments in Quantum Dot Light-Emitting Diodes for Skin-Attachable Electronics

Kim,

Yang

2024

Korean J. Chem. Eng.

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Highly luminescent red-emitting In(Zn)P quantum dots using zinc oxo cluster: synthesis and application to light-emitting diodes

Abstract: High quality red-emitting In(Zn)P QDs were synthesized by combining a Zn oxo cluster and seed-mediated continuous growth method.

Cited by 9 publications

References 38 publications

Advances, Challenges, and Perspectives for Heavy‐Metal‐Free Blue‐Emitting Indium Phosphide Quantum Dot Light‐Emitting Diodes

Advances, Challenges, and Perspectives for Heavy‐Metal‐Free Blue‐Emitting Indium Phosphide Quantum Dot Light‐Emitting Diodes

Zinc Carboxylate Surface Passivation for Enhanced Optical Properties of In(Zn)P Colloidal Quantum Dots

Recent Developments in Quantum Dot Light-Emitting Diodes for Skin-Attachable Electronics

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