Highly manufacturable 4 Gb DRAM using using 0.11 μm DRAM technology

Abstract

4Gb DRAM has been developed successfully using 0.1 1 pm DRAM technology. Considering manufacturability, we have focused to develop patterning technology that makes 0.11pm design rule possible using KrF lithography.Also, novel DRAM technologies, which give a big influence on the future DRAM integration, are developed as follows, using novel oxide(S0G) for the enhanced capability of gapfilling, borderless metal contact and stud processes, line-type storage node SAC, thin gate oxide, and CVD Al process for metal interconnections. IntroductionA DRAM technology suited for 0.11pm feature size @itch=0.22pm) was applied for the first time to develop 4Gb DRAM successfully. The strategic approach of optical techniques using hard OM for dense cell patterning and OPC methods for rare peripheral patterning with a high N.A. tool, can extend KrF lithography to the technology node of 9.1 1 pm. Furthermore, the full planarization surface formed

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