Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Gigliotti, James; Li, Xin; Deniz, Dogukan; Prudkovskiy, Vladimir; Turmaud, Jean-Philippe; Hu, Yisheng; Hu, Yue; Fossard, F.; Mérot, Jean-Sébastien; Loiseau, Annick; Patriarche, G.; Yoon, Bokwon; Landman, Uzi; Ougazzaden, A.; Berger, Claire; Heer, Walt A. de

doi:10.1021/acsnano.0c04164

Cited by 19 publications

(28 citation statements)

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“…There are several attempts to directly synthesize 2D h-BN on dielectric substrates, − such as sapphire, by metal–organic vapor-phase epitaxy (MOVPE), − CVD, − and molecular beam epitaxy (MBE). , Because of the low catalytic activity of dielectric materials, it is difficult to directly nucleate h-BN on sapphire substrates, leading to the poor crystallinity of h-BN layers. To compensate for the poor catalytic activity of dielectric substrates, extremely high substrate temperatures (1350–1700 °C) are usually required to achieve the direct growth of h-BN; otherwise, a dramatic degradation of the crystalline quality and optical properties is observed. − ,, In addition, high-temperature annealing at a temperature of ∼1700 °C has been demonstrated to be another effective approach to achieve high-quality h-BN films. , However, such high substrate temperatures are not only unavailable for most equipment but also not compatible with most commonly used substrates.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates

Chen

Wang

Meng

et al. 2022

ACS Appl. Mater. Interfaces

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Wide-band-gap layered semiconductor hexagonal boron nitride (h-BN) is attracting intense interest due to its unique optoelectronic properties and versatile applications in deep ultraviolet optoelectronic and two-dimensional electronic devices. However, it is still a great challenge to directly grow high-quality h-BN on dielectric substrates, and an extremely high substrate temperature or annealing is usually required. In this work, highquality few-layer h-BN is directly grown on sapphire substrates via ion beam sputtering deposition at a relatively low temperature of 700 °C by introducing NH 3 into the growth chamber. Such low growth temperature is attributed to the presence of abundant active N species, originating from the decomposition of NH 3 under ion beam irradiation. To further tailor the properties of h-BN, carbon was introduced into the h-BN layer by simultaneously introducing CH 4 and NH 3 during the growth process, indicating the wide applicability of this approach. Moreover, a deep ultraviolet (DUV) photodetector is also fabricated from a C-doped h-BN layer and exhibits superior performance compared with an intrinsic h-BN device.

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Section: Introductionmentioning

confidence: 99%

Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates

Chen

Wang

Meng

et al. 2022

ACS Appl. Mater. Interfaces

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“…[1][2][3][4][5] Monolayer hexagonal boron nitride (hBN) and graphene, [6,7] the thinnest of all insulators and semimetals, respectively, have been considered compatible lattice symmetry and small lattice mismatch (around 1.6%), highly oriented pyrolytic graphite (HOPG) and epitaxial graphene have emerged as promising substrates for the epitaxy of monolayer hBN as well as hBN/G heterostructures. [22,[27][28][29] In addition, the moiré superlattice formed between epitaxially grown hBN/G heterostructures can be utilized to engineer correlated quantum electronic states in their vdW heterostructures. [30,31] However, the epitaxy of hBN/G heterostructures with controlled interface configuration has remained elusive.…”

Section: Introductionmentioning

confidence: 99%

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

et al. 2022

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as fundamental building blocks of such 2D devices. Specifically, vertically stacked hBN/ graphene (hBN/G) van der Waals (vdW) heterostructures have been successfully employed to produce emergent properties, such as quantum Hall effect, [8] Hofstadter butterfly spectrum, [9] and plasmon and phonon polaritons. [10] Complementary to the vertical hBN/G vdW heterostructure, the in-plane version forms a covalent hBN/G heterostructure with equally attractive properties, such as transitions between semiconducting, half-metallic, and metallic phases, spin polarization magnetism, and exotic electronic states, [11][12][13][14][15] or even the possibility to reconstruct electronic interfaces similar to those observed in oxide heterostructures. [16,17] The scope of these fascinating properties could be radically expanded by demonstrating epitaxially grown monolayer hBN on graphene with superior structural, electrical, and optical properties, as well as precise control of both the hBN/G out-ofplane and in-plane monolayer interfaces.Recently, intensive efforts have been devoted to the epitaxial growth of hBN on metals, [18][19][20] sapphire, [21] and graphene substrates [22] by using sputtering, [23] chemical vapor deposition (CVD), [24] metal-organic chemical vapor deposition (MOCVD), [25] and molecular beam epitaxy (MBE). [26] Due to the Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface-mediated growth process for the controlled synthesis of high-quality monolayer hBN is proposed and further demonstrated. It is discovered that the in-plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single-domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep-ultraviolet emission at 6.12 eV stems from the 1s-exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer-scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.

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“…Furthermore, the controllable film thickness in a considered range from a few layers to tens or hundreds of nanometers is basically needed for many practical applications; nevertheless, the h-BN on a metallic substrate is generally limited to be only a few layers because of the self-limiting effect. Therefore, it is highly desirable to directly grow h-BN films on dielectric substrates, which has actually been attempted by utilizing various methods, such as metal–organic vapor phase epitaxy (MOVPE), − molecular beam epitaxy (MBE), − and ion beam sputtering deposition (IBSD). ,, However, carbon-rich metal organic precursors are widely used in MOVPE, resulting in unintentional C incorporation in the MOVPE-grown h-BN layers. Additionally, the complicated parasitic reactions between precursors lead to a rough surface profile and a low growth rate.…”

Section: Introductionmentioning

confidence: 99%

Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics

Wang

Meng

Chen

et al. 2022

Crystal Growth & Design

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Recently, wide band gap hexagonal boron nitride (h-BN) has drawn considerable attention because of its superior properties and potential for optoelectronics applications. However, extremely high substrate temperatures are usually required to obtain highly crystalline h-BN films on dielectric substrates, which is highly desired for most electronic device applications. In this work, wafer-scale high-crystalline-quality h-BN films have been obtained via high-temperature annealing on PLD-grown amorphous BN films. It is found that the annealed h-BN film is epitaxially grown on sapphire with an orientation relationship: h-BN (0001)[11̅00]//sapphire (0001)[11̅00]. The narrow Raman peak and XRD rocking curve, as well as the observed strong excitonic emission, indicate the high crystalline quality of our epitaxial h-BN films. Moreover, the photodetectors fabricated from the annealed h-BN films exhibit an excellent device performance, suggesting that high-temperature annealing is a simple and promising strategy to obtain highly crystalline h-BN films for optoelectronic device applications.

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Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Cited by 19 publications

References 50 publications

Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates

Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics

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