“…This versatility was confirmed by the control tests for Al 2 O 3 , TiO 2 , and ZnO performed at various temperatures (150 °C, 180 °C, 200 °C, 220 °C, and 250 °C) (Supporting Information, Figure S1). Trimethylaluminum (TMA; Al(CH 3 ) 3 ), titanium isopropoxide (TTIP; Ti(OC 3 H 7 ) 4 ), and diethylzinc (DEZ; Zn(C 2 H 5 ) 2 ) were used as Al, Ti and Zn metal precursors, respectively. The metal precursors equilibrated at predetermined temperatures (TMA: 10 °C, TTIP: 50 °C, and DEZ: 10 °C) and H 2 O were alternately entrained in the N 2 carrier flow using gas switching valves.…”