Highly Oriented Pb(Zr, Ti)O₃ Thin Films Prepared by Pulsed Laser Ablation on GaAs and Si Substrates with MgO Buffer Layer

Abstract

Highly [100]-oriented Pb(Zr, Ti)O3 (PZT) films were prepared on (100) GaAs and (100) Si substrates with MgO buffer layer by pulsed laser ablation (PLA). The depth profile of the constituent elements observed by X-ray photoelectron spectroscopy (XPS) shows that there are no remarkable interdiffusion and/or no formation of an alloying layer at both interfaces between PZT and MgO and between MgO and GaAs substrate. The [100]-oriented perovskite PZT films which exhibit the ferroelectric hysteresis loop were obtained on (100) Si substrate with MgO buffer layer with the thickness of only 50 Å, showing that this technique promises the realization of metal-ferroelectric-semiconductor field-effect transistors (MFS-FETs).

Magnetization reversal and magnetic anisotropies in epitaxial Fe/MgO and Fe/MgO/Fe heterostructures grown on Si(001)

“…Both the high mismatch of Ϫ22.5% between MgO ͑lattice constant a MgO ϭ4.21 Å) and Si ͑lattice constant a Si ϭ5.43 Å) and the large difference in thermal expansion coefficients (␣ MgO ϭ13.5ϫ10 Ϫ6 /°C vs ␣ Si ϭ4ϫ10 Ϫ6 /°C) in principle make the epitaxy of MgO on Si͑001͒ quite unlikely. As a consequence, there are few publications in which MgO/Si epitaxy is treated, either by laser ablation 9,[12][13][14][15] or other deposition techniques. 16 First studied almost 30 years ago 17,18 the epitaxy and magnetic properties of the Fe͑001͒/MgO͑001͒ system have received a lot of attention since then and nowadays can be considered a model system for the study of many fundamental magnetic properties.…”

Fabrication techniques and material properties of dielectric MgO thin films—A status review

“…However, Ishiguro et al [22] reported mixed h1 0 0i and h1 1 0i oriented epitaxial growth, with predominantly h1 0 0i oriented growth occurring at a substantially lower substrate temperature of 300 8C and higher oxygen pressure of 10 À4 Torr. Optimal conditions of 450 8C and 0.1-0.5 Torr were also reported for h1 0 0i oriented films, produced using an MgO target [23]. The substrate temperature reported for growth on GaAs were in better agreement with an almost universal setting of 350 8C [24,25], although the reported ambient pressures may over the same range as for the growth of MgO on Si.…”

“…Experimental evidence showed that the peak intensity of MgO h2 0 0i was greatly improved for the films deposited at O 2 pressure of 10 À2 Pa than 10 À3 Pa [27]. This result suggested that perfect h1 0 0i oriented MgO films could be deposited in low O 2 pressure, which is apparently different from that reported in the literature [140,141]. But high oxygen content leads to an increase in particles formation and consequently to a decrease in the deposition rate [88].…”

Pulsed laser deposited Er3+,Yb3+:YVO4 waveguiding films on MgO/Si substrates

“…The crystallinity of MgO layer strongly depends on the oxygen pressure applied during depositions as reported previously [12]. However, the experimental conditions reported for deposition of oriented MgO layer are quite different [13][14][15][16][17][18]. For this reason and bearing in mind our previous experiences for deposition of oxide films, the oxygen pressure of 1 Pa was selected.…”