Nanophasic CeO 2 -based thin films were grown at low temperatures on SiO 2 and Si(100) by plasma-enhanced (PE) CVD from a Ce IV b-diketonate first generation precursor. Film depositions were carried out in low-pressure Ar±O 2 plasmas at temperatures between 150 C and 300 C. The film microstructure was investigated by glancing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM), while the surface and in-depth chemical composition was studied by X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), respectively. Optical properties were analyzed by UV-vis optical absorption. Nanostructured CeO 2 -based films, with crystal size less than 6 nm and a controllable Ce IV /Ce III ratio, were obtained at temperatures even lower than that required for precursor vaporization (170 C). In particular, TEM analyses showed an island growth mode and different microstructural features as a function of the substrate used.