1980
DOI: 10.1063/1.91960
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Highly oriented zinc oxide films grown by the oxidation of diethylzinc

Abstract: Zinc oxide films, with a high degree of c-axis orientation, have been grown on glass substrates by a chemical vapor deposition process involving the oxidation of diethylzinc. Film growth was carried out over the 200–500 °C temperature range; however, the maximum crystal orientation was found to occur with substrate temperatures between 325 and 400 °C. The effect of different substrate materials on crystallographic orientation is also described in this letter.

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Cited by 113 publications
(43 citation statements)
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“…AZO thin films have been prepared by several techniques such as RF sputtering process [7], sol-gel method [8], pulsed laser deposition (PLD) [9], and chemical vapor deposition (CVD) [10]. Among these processes, the sputtering process is one of the best methods for preparation of AZO films because it has a lot of advantages such as low substrate temperature, good surface roughness, and low cost [11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%
“…AZO thin films have been prepared by several techniques such as RF sputtering process [7], sol-gel method [8], pulsed laser deposition (PLD) [9], and chemical vapor deposition (CVD) [10]. Among these processes, the sputtering process is one of the best methods for preparation of AZO films because it has a lot of advantages such as low substrate temperature, good surface roughness, and low cost [11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%
“…Progress made in the area of ZnObased materials and devices shows that ZnO has a great potential due to its wide and direct band gap of 3.37 eV and a large excitonic binding energy of 60 meV at room temperature [12]. In the past several years, various methods have been employed to prepare ZnO films such as chemical vapor deposition (CVD) [13][14][15], rf magnetron sputtering [16,17], sol-gel process [18,19], photoatomic layer deposition [20], spray pyrolysis [21,22], metal oxide chemical vapour deposition (MOCVD) [23], molecular beam epitaxy (MBE) [24,25], filtered cathodic vacuum arc technique (FCVA) [26,27] and pulsed laser deposition (PLD) [28][29][30][31].…”
Section: Introductionmentioning
confidence: 99%
“…It is an attractive and promising material for many applications in surface acoustic wave devices (SAW) [2], transparent electrode [3], blue and ultraviolet (UV) light emitters [4], solar cell windows [5], gas sensors [6], photovoltaic device [7] and room temperature ultraviolet lasers [4]. Various growth techniques such as chemical vapor deposition [8], r.f. magnetron sputtering [9], pulsed laser deposition (PLD) [3], evaporation [10], spray pyrolysis [11], photo-atomic layer deposition [12], metal oxide chemical vapor deposition (MOCVD) [13], molecular beam epitaxy (MBE) [4] and sol-gel process [14] have been used for ZnO film.…”
Section: Introductionmentioning
confidence: 99%