“…Progress made in the area of ZnObased materials and devices shows that ZnO has a great potential due to its wide and direct band gap of 3.37 eV and a large excitonic binding energy of 60 meV at room temperature [12]. In the past several years, various methods have been employed to prepare ZnO films such as chemical vapor deposition (CVD) [13][14][15], rf magnetron sputtering [16,17], sol-gel process [18,19], photoatomic layer deposition [20], spray pyrolysis [21,22], metal oxide chemical vapour deposition (MOCVD) [23], molecular beam epitaxy (MBE) [24,25], filtered cathodic vacuum arc technique (FCVA) [26,27] and pulsed laser deposition (PLD) [28][29][30][31].…”