Highly photo-responsive In2S3 thin film by sulfurizing indium layer

Improved photo sensing behavior of the terbium doped In2S3 thin films synthesized by spray pyrolysis technique

“…This suggests the higher ability of the device to convert incoming photon to current compared to other samples. The device's estimated detectivity was higher compared to the other reported works [44,45].…”

Synthesis and theoretical study of a mixed-ligand indium(iii) complex for fabrication of β-In2S3 thin films via chemical vapor deposition

“…5B), two peaks at 161.38 eV and 162.55 eV could be seen corresponding to S 2p 3/2 and S 2p 1/2 , respectively. 52 Two strong photoelectron peaks at binding energies of 445.12 and 452.71 eV are assigned to 3d 5/2 and In 3d 3/2 transitions, respectively, and a spin–orbit splitting of 7.6 eV (ref. 53) (Fig.…”

Size-dependent d0 room temperature ferromagnetism in undoped In2S3 nanoparticles

“…The emission peak at 417.1 nm is associated with the transition from the higher-energy level formed by surface traps to the valence band. 29 The emission peak at 467.6 nm is considered to be near-band-edge exciton recombination. 30 The lower energy peaks at 479.5 nm, 491.4 nm, 526.2 nm, and 571.2 nm arise from near-defect excitonic luminescence induced by intrinsic defects like sulfur vacancies (V s ), second-order sulfur vacancies , indium interstitials (I In ), and indium vacancies (V In ).…”