Highly Photoconductive Si Film Formed by Blue Laser Diode Annealing for System on Panel

Koswaththage, Charith Jayanada; Kensei, Nakao; Okada, T.; Noguchi, Takashi

doi:10.1109/jdt.2015.2463116

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Functional Thin Film Sensors Formed By Blda1

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2018

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“…By performing BLDA for thin Si films of 50 nm thickness, the photo-conductivity (σph) and relating photo-sensitivity (σph/σd) in visible wavelength, especially in red, became high and improved after hydrogenation below 450°C [23].…”

Section: Functional Thin Film Sensors Formed By Bldamentioning

confidence: 99%

(Invited) Advanced Crystallization Using Blue Laser-Diode Annealing for Low Temperature Poly Si TFTs

Noguchi

Okada

2018

ECS Trans.

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Laser Crystallizations using Blue Laser-Diodes Annealing (BLDA) is described for mounting the Si TFTs and the thin film functional sensors on panels. To realize high performance poly Si TFTs not only on glass but also on flexible sheets, effective laser annealing for high quality Si film by low temperature deposition is expected. To conduct a low temperature TFT process below 400°C, metal source/drain structure without using ion implantation is proposed as a low-cost fabrication. By inserting thermal buffer layers on flexible sheet, stable and effective crystallization of Si film using BLDA can be performed. High-performance CMOS TFT system with functional sensors is expected on arbitrary flexible sheets.

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Section: Functional Thin Film Sensors Formed By Bldamentioning

confidence: 99%