2024
DOI: 10.1021/acs.jpclett.4c00561
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Highly Polarization-Deep-Ultraviolet-Sensitive β-Ga2O3 Epitaxial Films by Disrupting Rotational Symmetry and Encrypted Solar-Blind Optical Communication Application

Chao Wu,
Guang Zhang,
Jinhua Jia
et al.

Abstract: Ultrawide bandgap semiconductor β-Ga 2 O 3 (4.9 eV), with its monoclinic crystal structure, exhibits distinct anisotropic characteristics both optically and electrically, making it an ideal material for solar-blind polarization photodetectors. In this work, β-Ga 2 O 3 epitaxial films were deposited on sapphire substrates with different orientations, and the mechanisms underlying the anisotropy of these epitaxial films were investigated. Compared to c-plane sapphire, the lattice mismatch between m-or r-plane sa… Show more

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Cited by 35 publications
(2 citation statements)
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“…Several low-dimensional materials with intrinsic optical anisotropy have been developed as an optional alternative. , Two-dimensional (2D) semiconductor sheets are sensitive to polarized light due to the anisotropic structure within their crystals. For example, Yuan explored layered black phosphorus transistors to achieve polarized light response over a wide spectral range . Yang developed polarized photodetectors in the short-wavelength region using GeSe 2 flakes .…”
Section: Introductionmentioning
confidence: 99%
“…Several low-dimensional materials with intrinsic optical anisotropy have been developed as an optional alternative. , Two-dimensional (2D) semiconductor sheets are sensitive to polarized light due to the anisotropic structure within their crystals. For example, Yuan explored layered black phosphorus transistors to achieve polarized light response over a wide spectral range . Yang developed polarized photodetectors in the short-wavelength region using GeSe 2 flakes .…”
Section: Introductionmentioning
confidence: 99%
“…This is because GaN-based APDs can eliminate the need for expensive optical filters and considerably improve system integration and reliability. Recently, some sun-blind UV communication systems have also been proposed [ 14 ]. GaN-based APDs show the potential to achieve bandwidths as high as 62.9 GHz [ 15 ], which offers the potential advantage of high bandwidth and demonstrates a unique benefit for application in optical communication systems.…”
Section: Introductionmentioning
confidence: 99%